Patents by Inventor René Vervuurt

René Vervuurt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD AND SYSTEM FOR FORMING METAL SILICON OXIDE AND METAL SILICON OXYNITRIDE LAYERS
    Publication number: 20230349043
    Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.
    Type: Application
    Filed: June 9, 2023
    Publication date: November 2, 2023
    Inventors: Takashi Yoshida, René Vervuurt
  • Method for forming metal silicon oxide and metal silicon oxynitride layers
    Patent number: 11725280
    Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: August 15, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Takashi Yoshida, René Vervuurt
  • METHODS FOR DEPOSITING GAP FILING FLUIDS AND RELATED SYSTEMS AND DEVICES
    Publication number: 20220076996
    Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen.
    Type: Application
    Filed: September 7, 2021
    Publication date: March 10, 2022
    Inventors: Timothee Blanquart, Viljami Pore, René Vervuurt, Jihee Jeon
  • METHOD AND SYSTEM FOR FORMING METAL SILICON OXIDE AND METAL SILICON OXYNITRIDE LAYERS
    Publication number: 20220064795
    Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.
    Type: Application
    Filed: August 23, 2021
    Publication date: March 3, 2022
    Inventors: Takashi Yoshida, René Vervuurt