Abstract: A memory device includes a substrate, a reference layer, a tunneling layer, a film stack, and a capping layer. The reference layer is disposed on the substrate. The tunneling layer is disposed on the reference layer. The film stack is formed over the tunneling layer and on the substrate, wherein the film stack includes a first free layer, a spacer with high exchange stiffness constant and a second free layer. The first free layer is in contact with the tunneling layer and the film stack. The spacer with high exchange stiffness constant is sandwiched between the first free layer and the second free layer. The capping layer is disposed on and electrically connected to the film stack.

Abstract: A method of forming a semiconductor device includes forming a fin on a substrate, the fin comprising alternately stacked first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form a plurality of spaces each between adjacent two of the second semiconductor layers, implanting oxygen into the second semiconductor layers, and forming a gate structure wrapping around the second semiconductor layers.

Abstract: A magnetic tunnel junction (MTJ) stack includes a reference layer, a tunnel barrier layer, a free layer, and a superparamagnetic layer. The reference layer has a fixed magnetization direction. The tunnel barrier layer is disposed on the reference layer, and includes an insulating material. The free layer has a changeable magnetization direction, and is disposed on the tunnel barrier layer opposite to the reference layer. The superparamagnetic layer is disposed on the free layer opposite to the tunnel barrier layer. Methods for manufacturing the MTJ stack are also disclosed.

Abstract: A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration.

Abstract: A method includes providing a structure having a substrate and a channel layer over the substrate; forming a high-k gate dielectric layer over the channel layer; forming a work function metal layer over the high-k gate dielectric layer; forming a silicide layer over the work function metal layer; annealing the structure such that a first portion of the work function metal layer that interfaces with the high-k gate dielectric layer is doped with silicon elements from the silicide layer; removing the silicide layer; and forming a bulk metal layer over the work function metal layer.

Abstract: A method includes providing a structure having a substrate and a channel layer over the substrate; forming a high-k gate dielectric layer over the channel layer; forming a work function metal layer over the high-k gate dielectric layer; forming a silicide layer over the work function metal layer; annealing the structure such that a first portion of the work function metal layer that interfaces with the high-k gate dielectric layer is doped with silicon elements from the silicide layer; removing the silicide layer; and forming a bulk metal layer over the work function metal layer.

Abstract: A device and a method for heating and curing artificial stone with microwave are provided. The device includes a microwave curing cavity, within which an incompletely cured artificial stone is placed, and microwave is used to heat the artificial stone to completely cure the artificial stone; wherein, a frequency of the microwave is in a range of 300˜1120 MHz. The present disclosure provides a separately designed microwave curing cavity, and utilizes 300˜1120 MHz microwave having a large penetrating depth, to realize a rapid curing of a large-sized artificial stone.

Abstract: A device and a method for heating and curing artificial stone with microwave are provided. The device includes a microwave curing cavity, within which an incompletely cured artificial stone is placed, and microwave is used to heat the artificial stone to completely cure the artificial stone; wherein, a frequency of the microwave is in a range of 300˜1120 MHz. The present disclosure provides a separately designed microwave curing cavity, and utilizes 300˜1120 MHz microwave having a large penetrating depth, to realize a rapid curing of a large-sized artificial stone.

Abstract: An electronic flame analog installation for incense wax canister providing better light-emitting results, compact structure among members, simple construction and powerful utility includes a lampshade containing an electronic light emitting installation; and a lamp holder disposed to the lower end of the lampshade to accommodate the tip of the lampshade to adapt to the tip of the incense wax canister; the lamp holder and the top of the canister being effectively fixed and connected to each other; and the built in electronic light-emitting installation produces electronic flame to provide the canister better flame imitation results.

Abstract: A wax burning device includes an electrically insulative and heat proof housing, a base with the housing mounted thereon, a heating element mounted in the housing, a resistor mounted in the heating element, a cord electrically interconnected the resistor and an external power source, a switch provided on the cord, a circuit board provided in the housing, and a light assembly including one or more LEDs formed on the circuit board and being electrically connected to the circuit board. Uniform light is emitted from the light assembly when the wax burning device is activating.

Abstract: There is described a method (500) for automatic speech classification performed on an electronic device. The method (500) includes receiving an utterance waveform (520) and processing the waveform (535) to provide feature vectors. Then a step (537) provides for performing speech recognition of the utterance waveform by comparing the feature vectors with at least two sets of acoustic models, one of the sets being a general vocabulary acoustic model set and another of the sets being a digit acoustic model set. The speech recognition step (537) provides candidate strings and associated classification scores from each of the sets of acoustic models. The utterance type is then classified (550) for the waveform based on the classification scores and a selecting step (553) selects one of the candidates as a speech recognition result based on the utterance type. A response is provided (555) depending on the speech recognition result.