Abstract: Provided is a method for bonding a high heat conductive insulating resin, by which the high heat conductive insulating resin can be bonded to a heat sink without deteriorating insulating characteristics and heat conducting characteristics. The method includes: a fixing step of fixing the heat sink by means of a jig having a vacuuming function; a placing step of placing the heat sink fixed with the jig on a sheet-like high heat conductive insulating resin previously bonded to a cooler and making a hermetically closed space; and a bonding step of having a bonding section between the heat sink and the sheet-like high heat conductive insulating resin under a negative pressure by depressurizing the hermetically closed space, heating the sheet-like high heat conductive insulating resin, and bonding the sheet-like high heat conductive insulating resin to the heat sink.

Abstract: Provided is a method for bonding a high heat conductive insulating resin, by which the high heat conductive insulating resin can be bonded to a heat sink without deteriorating insulating characteristics and heat conducting characteristics. The method includes: a fixing step of fixing the heat sink by means of a jig having a vacuuming function; a placing step of placing the heat sink fixed with the jig on a sheet-like high heat conductive insulating resin previously bonded to a cooler and making a hermetically closed space; and a bonding step of having a bonding section between the heat sink and the sheet-like high heat conductive insulating resin under a negative pressure by depressurizing the hermetically closed space, heating the sheet-like high heat conductive insulating resin, and bonding the sheet-like high heat conductive insulating resin to the heat sink.

Abstract: A circuit device includes a ceramic substrate, an Al wiring layer provided on the ceramic substrate, and a semiconductor device and a bus bar which are electrically connected to the wiring layer. On part of the wiring layer, a Ni layer is plated. Thus a coated region in which the wiring layer is coated with nickel having solder wetability superior to aluminum and an exposing region in which the wiring layer is exposed as viewed from above the ceramic substrate are provided. The semiconductor device is connected onto the Ni layer within the coated region through solder. The bus bar is ultrasonically bonded to the wiring layer within the exposing region as viewed from above the ceramic substrate. Thus, the circuit device including the semiconductor device and the bus bar that are bonded to the ceramic substrate by sufficient bonding strength and its manufacturing method are provided.

Abstract: A circuit device includes a ceramic substrate, an Al wiring layer provided on the ceramic substrate, and a semiconductor device and a bus bar which are electrically connected to the wiring layer. On part of the wiring layer, a Ni layer is plated. Thus a coated region in which the wiring layer is coated with nickel having solder wetability superior to aluminum and an exposing region in which the wiring layer is exposed as viewed from above the ceramic substrate are provided. The semiconductor device is connected onto the Ni layer within the coated region through solder. The bus bar is ultrasonically bonded to the wiring layer within the exposing region as viewed from above the ceramic substrate. Thus, the circuit device including the semiconductor device and the bus bar that are bonded to the ceramic substrate by sufficient bonding strength and its manufacturing method are provided.