Abstract: A method for forming a semiconductor structure is provided.

Abstract: A device for realizing the splicing of an array fiber and a large-size quartz end cap comprises a carbon dioxide laser, a light splitter, a light beam shaper, a high reflectivity mirror, an image detection module, an array fiber and a carrier thereof, a large-size quartz end cap and a carrier thereof, a stepping motor, a thermodetector, and a computer; a laser beam emitted by the carbon dioxide laser is divided into two light beams through a light splitter, after the two light beams respectively pass through the beam shaper and the high reflectivity mirror, two strip-shaped light spots with uniform power density are integrally formed to heat a splicing face of the large-size quartz end cap, a uniform temperature field of a target splicing area is achieved through indirect heating and heat conduction.

Abstract: A method for forming a semiconductor structure is provided.

Abstract: A device for realizing the splicing of an array fiber and a large-size quartz end cap comprises a carbon dioxide laser, a light splitter, a light beam shaper, a high reflectivity mirror, an image detection module, an array fiber and a carrier thereof, a large-size quartz end cap and a carrier thereof, a stepping motor, a thermodetector, and a computer; a laser beam emitted by the carbon dioxide laser is divided into two light beams through a light splitter, after the two light beams respectively pass through the beam shaper and the high reflectivity mirror, two strip-shaped light spots with uniform power density are integrally formed to heat a splicing face of the large-size quartz end cap, a uniform temperature field of a target splicing area is achieved through indirect heating and heat conduction.