Patents by Inventor Ren-Zheng Liao

Ren-Zheng Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250209249
    Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.
    Type: Application
    Filed: March 17, 2025
    Publication date: June 26, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Hsiung Chen, Chun-Chen Chen, Shao-huan Wang, Kuo-Nan Yang, Chung-Hsing Wang, Ren-Zheng Liao, Meng-Xiang Lee
  • Patent number: 12254260
    Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.
    Type: Grant
    Filed: July 28, 2023
    Date of Patent: March 18, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Sheng-Hsiung Chen, Chun-Chen Chen, Shao-huan Wang, Kuo-Nan Yang, Chung-Hsing Wang, Ren-Zheng Liao, Meng-Xiang Lee
  • Publication number: 20240258200
    Abstract: A semiconductor devices includes a substrate, a power grid structure, and a through via penetrating the substrate. The power grid structure includes: first and second rails extending along a first direction, a conductive wire, a third rail, a conductive via, and a connecting member. The conductive wire is between the first and second rails, and extends along the first direction. The third rail is below the first rail, the second rail and the conductive wire, and extends along a second direction perpendicular to the first direction. The conductive via is between and electrically couples the conductive wire to the third rail. The connecting member is between and electrically couples the first rail to the conductive wire. The through via extends through the substrate and along a third direction perpendicular to the first direction and the second direction. The through via is disposed on and coupled to the conductive wire.
    Type: Application
    Filed: May 30, 2023
    Publication date: August 1, 2024
    Inventors: Chin-Shen LIN, Ren-Zheng LIAO, Hao-Tien KAN, Yung-Fong LU
  • Publication number: 20240020451
    Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Sheng-Hsiung Chen, Chun-Chen Chen, Shao-huan Wang, Kuo-Nan Yang, Chung-Hsing Wang, Ren-Zheng Liao, Meng-Xiang Lee
  • Publication number: 20230420369
    Abstract: An integrated circuit (IC) device includes a substrate with a power control circuit, front and back side metal layers, and first and second feed through vias (FTVs). The front side metal layer has first and second front side power rails. The back side metal layer has first and second back side power rails. The first FTV extends through the substrate, and couples the first front side power rail to the first back side power rail. The second FTV extends through the substrate, and couples the second front side power rail to the second back side power rail. The power control circuit is coupled to the first and second front side power rails, and is controllable to electrically connect the first front side power rail to the second front side power rail, or electrically disconnect the first front side power rail from the second front side power rail.
    Type: Application
    Filed: September 2, 2022
    Publication date: December 28, 2023
    Inventors: Chin-Shen LIN, Luk LU, Hao-Tien KAN, Ren-Zheng LIAO
  • Patent number: 11748542
    Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: September 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Sheng-Hsiung Chen, Chun-Chen Chen, Shao-huan Wang, Kuo-Nan Yang, Chung-Hsing Wang, Ren-Zheng Liao, Meng-Xiang Lee