Patents by Inventor Rena Takahashi
Rena Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240129215Abstract: A delay measurement device includes a NW measurement unit that measures a topology, a delay amount of each link, jitter, and a packet loss rate, and causes a NW state holding unit to hold them as NW state information, a link quality calculation unit that calculates the link quality between the end points as a weight on the basis of the NW state information including the topology, the delay amount of each link, the jitter, and the packet loss rate, and a path calculation function unit that calculates a measurement path on the basis of a weighted topology in which the weight of the link quality calculated by the link quality calculation unit is reflected in the topology. The NW measurement unit transmits a measurement packet to a start point and measures the delay amount of a measurement target section of a NW.Type: ApplicationFiled: February 18, 2021Publication date: April 18, 2024Inventors: Kazuma KAMIENOO, Ken TAKAHASHI, Hiroki MORI, Rena OMACHI
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Patent number: 11923166Abstract: In a cylindrical guard electrode (5) provided on the outer peripheral side of an electron generation part (31) of an emitter (3), a distal end section (5A) 5 positioned in the emission direction of an electron beam (L1) from the electron generation part (31) includes: a distal end inner-peripheral-side part (A1) having an inner-peripheral-side curved surface portion (a1) convex in the emission direction; a distal end outer-peripheral-side part (A2) having an outer-peripheral-side curved portion (a2) convex in the emission direction; and a 10 distal end middle part (A3) positioned between the distal end inner-peripheral-side (A1) and the distal end outer-peripheral-side part (A2). The distal end middle part (A3) has a flat surface portion (a3) between the inner-peripheral-surface portion (a1) and the outer-peripheral-side curved surface portion (a2) so as to extend in the direction therebetween.Type: GrantFiled: August 2, 2021Date of Patent: March 5, 2024Assignee: MEIDENSHA CORPORATIONInventors: Takumi Hayashi, Rena Takahashi, Hayato Ochi
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Patent number: 11776785Abstract: A vacuum container is configured so that an opening on one side and an opening on another side in the longitudinal direction of a cylindrical insulating body are sealed with an emitter unit and a target unit respectively; and a vacuum chamber is provided on the inner peripheral side of the insulating body. The emitter unit is provided with: a moving body located on the one side in the longitudinal direction in the vacuum chamber and supported so as to be movable in the longitudinal direction via a bellows; and a guard electrode located on the outer peripheral side of the moving body. An emitter section having an electron generating section is formed at a tip section of the moving body on the other side in the longitudinal direction by subjecting the surface of the tip section to film formation processing.Type: GrantFiled: May 26, 2021Date of Patent: October 3, 2023Assignee: MEIDENSHA CORPORATIONInventors: Hayato Ochi, Rena Takahashi
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Publication number: 20230298844Abstract: In a cylindrical guard electrode (5) provided on the outer peripheral side of an electron generation part (31) of an emitter (3), a distal end section (5A) 5 positioned in the emission direction of an electron beam (L1) from the electron generation part (31) includes: a distal end inner-peripheral-side part (A1) having an inner-peripheral-side curved surface portion (a1) convex in the emission direction; a distal end outer-peripheral-side part (A2) having an outer-peripheral-side curved portion (a2) convex in the emission direction; and a 10 distal end middle part (A3) positioned between the distal end inner-peripheral-side (A1) and the distal end outer-peripheral-side part (A2). The distal end middle part (A3) has a flat surface portion (a3) between the inner-peripheral-surface portion (a1) and the outer-peripheral-side curved surface portion (a2) so as to extend in the direction therebetween.Type: ApplicationFiled: August 2, 2021Publication date: September 21, 2023Applicant: MEIDENSHA CORPORATIONInventors: Takumi HAYASHI, Rena TAKAHASHI, Hayato OCHI
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Publication number: 20230197394Abstract: A vacuum container is configured so that an opening on one side and an opening on another side in the longitudinal direction of a cylindrical insulating body are sealed with an emitter unit and a target unit respectively; and a vacuum chamber is provided on the inner peripheral side of the insulating body. The emitter unit is provided with: a moving body located on the one side in the longitudinal direction in the vacuum chamber and supported so as to be movable in the longitudinal direction via a bellows; and a guard electrode located on the outer peripheral side of the moving body. An emitter section having an electron generating section is formed at a tip section of the moving body on the other side in the longitudinal direction by subjecting the surface of the tip section to film formation processing.Type: ApplicationFiled: May 26, 2021Publication date: June 22, 2023Applicant: MEIDENSHA CORPORATIONInventors: Hayato OCHI, Rena TAKAHASHI
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Publication number: 20230197395Abstract: opening edge surface (45a) of an emitter supporting unit female screw bore (45) provided at an emitter supporting unit (4) extends along radial direction of the emitter supporting unit female screw bore (45). An emitter supporting unit operation hole (32) provided at a flange portion (30a) of a vacuum enclosure (11) has shape into which one selected from a position adjustment shaft (6) and a pressing shaft (9) can be inserted from their shaft tip sides. The position adjustment shaft is provided, on an outer circumferential surface of its tip (61), with a tip side male screw portion (61a) that can be screwed into the emitter supporting unit female screw bore (45). The pressing shaft has, at its tip (91), a tip surface (91a) having a larger diameter than an opening diameter of the emitter supporting unit female screw bore (45) and extending along radial direction of the pressing shaft.Type: ApplicationFiled: May 26, 2021Publication date: June 22, 2023Applicant: MEIDENSHA CORPORATIONInventors: Takumi HAYASHI, Rena TAKAHASHI, Hayato OCHI
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Patent number: 11615937Abstract: An emitter support structure for a field emission device, the emitter support structure includes: a support portion disposed to be moved in a direction of both ends of a vacuum chamber of the field emission device, and configured to support an emitter of the field emission device; a protruding portion formed at one end portion of the support portion which confronts a target of the field emission device, and to which the emitter is inserted and mounted; a slit formed in a circumference wall portion of the protruding portion in a height direction of the circumference wall portion; and a redundant brazing material groove formed in an outside of the protruding portion along the circumference wall portion.Type: GrantFiled: May 12, 2020Date of Patent: March 28, 2023Assignee: MEIDENSHA CORPORATIONInventors: Hayato Ochi, Rena Takahashi
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Patent number: 11527378Abstract: It is a CNT device (1) (carbon-metal structure) equipped with a carbon nanotube layer (2) (CNT layer 2; same hereafter) on a metal pedestal (4). The metal pedestal (4) is brazed to the CNT layer (2) with a brazing material layer (3) interposed therebetween. When manufacturing the CNT device (1), firstly, the CNT layer (2) is formed on a heat-resistant textured substrate (6). Next, the metal pedestal (4) is brazed to the CNT layer (2) that is on the heat-resistant textured substrate (6) with the brazing material layer (3) interposed therebetween. Then, the metal pedestal (4) (and the CNT layer 2) is peeled off the heat-resistant textured substrate (6) to transfer the CNT layer (2) from the heat-resistant textured substrate (6) to the metal pedestal (4).Type: GrantFiled: October 21, 2019Date of Patent: December 13, 2022Assignees: WASEDA UNIVERSITY, MEIDENSHA CORPORATIONInventors: Suguru Noda, Sae Kitagawa, Kotaro Yasui, Hisashi Sugime, Daizo Takahashi, Yuichi Nishikiori, Hayato Ochi, Rena Takahashi, Toshimasa Fukai
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Publication number: 20220351930Abstract: An emitter support structure for a field emission device, the emitter support structure includes: a support portion disposed to be moved in a direction of both ends of a vacuum chamber of the field emission device, and configured to support an emitter of the field emission device; a protruding portion formed at one end portion of the support portion which confronts a target of the field emission device, and to which the emitter is inserted and mounted; a slit formed in a circumference wall portion of the protruding portion in a height direction of the circumference wall portion; and a redundant brazing material groove formed in an outside of the protruding portion along the circumference wall portion.Type: ApplicationFiled: May 12, 2020Publication date: November 3, 2022Applicant: MEIDENSHA CORPORATIONInventors: Hayato OCHI, Rena TAKAHASHI
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Publication number: 20210375572Abstract: It is a CNT device (1) (carbon-metal structure) equipped with a carbon nanotube layer (2) (CNT layer 2; same hereafter) on a metal pedestal (4). The metal pedestal (4) is brazed to the CNT layer (2) with a brazing material layer (3) interposed therebetween. When manufacturing the CNT device (1), firstly, the CNT layer (2) is formed on a heat-resistant textured substrate (6). Next, the metal pedestal (4) is brazed to the CNT layer (2) that is on the heat-resistant textured substrate (6) with the brazing material layer (3) interposed therebetween. Then, the metal pedestal (4) (and the CNT layer 2) is peeled off the heat-resistant textured substrate (6) to transfer the CNT layer (2) from the heat-resistant textured substrate (6) to the metal pedestal (4).Type: ApplicationFiled: October 21, 2019Publication date: December 2, 2021Applicants: WASEDA UNIVERSITY, MEIDENSHA CORPORATIONInventors: Suguru NODA, Sae KITAGAWA, Kotaro YASUI, Hisashi SUGIME, Daizo TAKAHASHI, Yuichi NISHIKIORI, Hayato OCHI, Rena TAKAHASHI, Toshimasa FUKAI
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Patent number: 9444051Abstract: The present invention relates to a donor substrate and a method of manufacturing a light-emitting device. The donor substrate includes a reflective layer including an opening portion, a light absorption layer covering the opening portion of the reflective layer over the reflective layer, a heat insulating layer including an opening portion in a position overlapped with the opening portion of the reflective layer over the light absorption layer, and a material layer including a light-emitting material covering the opening portion of the heat insulating layer over the heat insulating layer. A target substrate and the donor substrate are disposed to face each other, and an EL layer is formed over the target substrate by performing light irradiation from a rear surface of the donor substrate.Type: GrantFiled: April 9, 2012Date of Patent: September 13, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tomoya Aoyama, Yosuke Sato, Kohei Yokoyama, Rena Takahashi
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Patent number: 9159923Abstract: An evaporation donor substrate that makes it possible to evaporate only a desired evaporation material in the case of performing deposition by an evaporation method. Thus, the use efficiency of an evaporation material can be increased resulting in reduction in production cost, and further a film with high uniformity can be deposited. The evaporation donor substrate can be obtained by forming a reflective layer having an opening over a substrate, forming a thermal insulation layer having a light-transmitting property separately over the substrate and the reflective layer, forming a light absorption layer over the thermal insulation layer, and forming a material layer over the light absorption layer.Type: GrantFiled: December 18, 2008Date of Patent: October 13, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kohei Yokoyama, Yosuke Sato, Tomoya Aoyama, Rena Takahashi
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Patent number: 8425974Abstract: A first supporting substrate on a front surface of which a reflective layer having an opening is formed and a second supporting substrate on a front surface of which a light absorption layer patterned into island or stripe shapes and a material layer over the light absorption layer are formed are prepared, the first and second supporting substrates are disposed so that the opening of the reflective layer and the light absorption layer overlap with each other and the reflective layer is in contact with a back surface of the second supporting substrate, the second supporting substrate and a deposition target substrate are disposed so that the front surface of the second supporting substrate faces the deposition target substrate, and the material layer is attached to the deposition target substrate by irradiating the back surface of the first supporting substrate with light and by sublimating the material layer.Type: GrantFiled: November 17, 2008Date of Patent: April 23, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Rena Takahashi, Yosuke Sato, Kohei Yokoyama, Tomoya Aoyama
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Publication number: 20120251772Abstract: The present invention relates to a donor substrate and a method of manufacturing a light-emitting device. The donor substrate includes a reflective layer including an opening portion, a light absorption layer covering the opening portion of the reflective layer over the reflective layer, a heat insulating layer including an opening portion in a position overlapped with the opening portion of the reflective layer over the light absorption layer, and a material layer including a light-emitting material covering the opening portion of the heat insulating layer over the heat insulating layer. A target substrate and the donor substrate are disposed to face each other, and an EL layer is formed over the target substrate by performing light irradiation from a rear surface of the donor substrate.Type: ApplicationFiled: April 9, 2012Publication date: October 4, 2012Inventors: Tomoya Aoyama, Yosuke Sato, Kohei Yokoyama, Rena Takahashi
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Patent number: 8277871Abstract: To provide an evaporation donor substrate which is used for deposition by an evaporation method and which allows reduction in manufacturing cost and high uniformity of a film which is deposited. In addition, to provide a method for manufacturing a light-emitting device using the evaporation donor substrate. The evaporation donor substrate includes a reflective layer having an opening which is formed over a substrate, a heat insulating layer having a light-transmitting property which is formed over the substrate and the reflective layer, a light absorption layer which is formed over the heat insulating layer; and a material layer which is formed over the light absorption layer.Type: GrantFiled: October 21, 2008Date of Patent: October 2, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tomoya Aoyama, Yosuke Sato, Kohei Yokoyama, Rena Takahashi
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Patent number: 8153201Abstract: The present invention provides a method of manufacturing a light-emitting device and an evaporation donor substrate, by which the precision of patterning of an EL layer of each color can be improved in manufacture of a full color flat panel display using emission colors of red, green, and blue. A first substrate which includes a reflective layer including an opening portion, a heat insulating layer including an opening portion in a position overlapped with the opening portion of the reflective layer over the reflective layer, a light absorption layer covering the opening portion of the reflective layer and the opening portion of the heat insulating layer over the heat insulating layer, and a material layer over the light absorption layer is used. While one surface of the first substrate is disposed close to a deposition target surface of a second substrate, the first substrate is irradiated with light from the other surface of the first substrate.Type: GrantFiled: October 21, 2008Date of Patent: April 10, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tomoya Aoyama, Yosuke Sato, Kohei Yokoyama, Rena Takahashi
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Publication number: 20090169809Abstract: An evaporation donor substrate that makes it possible to evaporate only a desired evaporation material in the case of performing deposition by an evaporation method. Thus, the use efficiency of an evaporation material can be increased resulting in reduction in production cost, and further a film with high uniformity can be deposited. The evaporation donor substrate can be obtained by forming a reflective layer having an opening over a substrate, forming a thermal insulation layer having a light-transmitting property separately over the substrate and the reflective layer, forming a light absorption layer over the thermal insulation layer, and forming a material layer over the light absorption layer.Type: ApplicationFiled: December 18, 2008Publication date: July 2, 2009Inventors: Kohei Yokoyama, Yosuke Sato, Tomoya Aoyama, Rena Takahashi
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Publication number: 20090142510Abstract: A first supporting substrate on a front surface of which a reflective layer having an opening is formed and a second supporting substrate on a front surface of which a light absorption layer patterned into island or stripe shapes and a material layer over the light absorption layer are formed are prepared, the first and second supporting substrates are disposed so that the opening of the reflective layer and the light absorption layer overlap with each other and the reflective layer is in contact with a back surface of the second supporting substrate, the second supporting substrate and a deposition target substrate are disposed so that the front surface of the second supporting substrate faces the deposition target substrate, and the material layer is attached to the deposition target substrate by irradiating the back surface of the first supporting substrate with light and by sublimating the material layer.Type: ApplicationFiled: November 17, 2008Publication date: June 4, 2009Inventors: Rena Takahashi, Yosuke Sato, Kohei Yokohama, Tomoya Aoyama
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Publication number: 20090104403Abstract: To provide an evaporation donor substrate which is used for deposition by an evaporation method and which allows reduction in manufacturing cost and high uniformity of a film which is deposited. In addition, to provide a method for manufacturing a light-emitting device using the evaporation donor substrate. The evaporation donor substrate includes a reflective layer having an opening which is formed over a substrate, a heat insulating layer having a light-transmitting property which is formed over the substrate and the reflective layer, a light absorption layer which is formed over the heat insulating layer; and a material layer which is formed over the light absorption layer.Type: ApplicationFiled: October 21, 2008Publication date: April 23, 2009Inventors: Tomoya AOYAMA, Yosuke SATO, Kohei YOKOYAMA, Rena TAKAHASHI
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Publication number: 20090104835Abstract: The present invention provides a method of manufacturing a light-emitting device and an evaporation donor substrate, by which the precision of patterning of an EL layer of each color can be improved in manufacture of a full color flat panel display using emission colors of red, green, and blue. A first substrate which includes a reflective layer including an opening portion, a heat insulating layer including an opening portion in a position overlapped with the opening portion of the reflective layer over the reflective layer, a light absorption layer covering the opening portion of the reflective layer and the opening portion of the heat insulating layer over the heat insulating layer, and a material layer over the light absorption layer is used. While one surface of the first substrate is disposed close to a deposition target surface of a second substrate, the first substrate is irradiated with light from the other surface of the first substrate.Type: ApplicationFiled: October 21, 2008Publication date: April 23, 2009Inventors: Tomoya Aoyama, Yosuke Sato, Kohei Yokoyama, Rena Takahashi