Abstract: The invention relates to a photocatalytic carbon dioxide reduction method carried out in liquid and/or gas phase under irradiation, using a photocatalyst containing a first semiconductor, particles comprising one or more metallic-state elements M, and a second semiconductor SC, wherein the method is carried out by contacting a feedstock containing the CO2 and at least one sacrificial compound with the photocatalyst, then irradiating the photocatalyst such that the CO2 is reduced, and oxidising the sacrificial compound in order to produce an effluent containing at least in part C1 or above carbon molecules other than CO2.

Abstract: Process for preparing a porous monolith comprising between 10% and 100% by weight of a semiconductor relative to the total weight of the porous monolith, which process comprises the following steps: a) a first aqueous suspension containing polymer particles is prepared; b) a second aqueous suspension containing particles of least one inorganic semiconductor is prepared; c) the two aqueous suspensions prepared in steps a) and b) are mixed in order to obtain a paste; d) a heat treatment of the paste obtained in step c) is carried out in order to obtain the monolith with multimodal porosity.

Abstract: The invention relates to a porous monolith comprising between 20 wt.-% and 70 wt.-% TiO 2 relative to the total weight of the monolith, and between 30 wt.-% and 80 wt.-% a refractory oxide, selected from silica, alumina or silica-alumina, relative to the total weight of the monolith, characterized in that said porous monolith has a bulk density of less than 0.19 g/mL.

Abstract: The invention relates to a photocatalytic carbon dioxide reduction method carried out in liquid and/or gas phase under irradiation, using a photocatalyst containing a first semiconductor, particles comprising one or more metallic-state elements M, and a second semiconductor SC, wherein the method is carried out by contacting a feedstock containing the CO2 and at least one sacrificial compound with the photocatalyst, then irradiating the photocatalyst such that the CO2 is reduced, and oxidising the sacrificial compound in order to produce an effluent containing at least in part C1 or above carbon molecules other than CO2.

Abstract: Process for preparing a porous monolith comprising between 10% and 100% by weight of a semiconductor relative to the total weight of the porous monolith, which process comprises the following steps: a) a first aqueous suspension containing polymer particles is prepared; b) a second aqueous suspension containing particles of least one inorganic semiconductor is prepared; c) the two aqueous suspensions prepared in steps a) and b) are mixed in order to obtain a paste; d) a heat treatment of the paste obtained in step c) is carried out in order to obtain the monolith with multimodal porosity.

Abstract: The invention relates to a porous monolith comprising between 20 wt.-% and 70 wt.-% Ti0 2 relative to the total weight of the monolith, and between 30 wt.-% and 80 wt.-% a refractory oxide, selected from silica, alumina or silica-alumina, relative to the total weight of the monolith, characterized in that said porous monolith has a bulk density of less than 0.19 g/mL.

Abstract: Method for treating a gaseous feedstock containing molecular oxygen and one or more volatile compounds, which method comprises the following steps: a) bringing said gaseous feedstock containing molecular oxygen and one or more volatile organic compounds into contact with a monolith comprising silica and titanium dioxide, said monolith comprising a type-I macropore volume, of which the diameter of the pores is greater than 50 nm and less than or equal to 1000 nm, of between from 0.1 to 3 ml/g, and a type-II macropore volume, of which the diameter of the pores is greater than 1 ?m and less than or equal to 10 ?m, of between from 1 to 8 ml/g; b) irradiating said monolith with at least one irradiation source producing at least one wavelength lower than 400 nm in order to convert said volatile organic compounds into carbon dioxide, said step b) being carried out at a temperature between ?30° C. and +200° C. and at a pressure between 0.01 MPa and 70 MPa.