Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal imposes the drain-source current of the first transistor.

Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

Abstract: An exemplary semiconductor memory includes a channel region disposed in a semiconductor body, a gate region overlying the channel region, a first and a second source/drain region disposed in the semiconductor body, where the first source/drain region is spaced from the second source/drain region by the channel region. The exemplary memory further includes a first contact electrically contacting the first source/drain region, a second contact electrically contacting the first source/drain region and spaced from the second contact, and a third contact electrically contacting the second source/drain region. The first and second contacts are configured so that a resistivity of the first source/drain region can be irreversibly increased by application of an electric current between the first and second contacts. The first contact extends over a first width, the third contact extends over a third width, where the first width is smaller than the third width.

Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

Abstract: An integrated electronic device includes a silicon-on-insulator (SOI) substrate. At least one MOS transistor is formed in and on the SOI substrate. The at least one MOS transistor has a gate region receiving a control voltage, a back gate receiving an adjustment voltage, a source/drain region having a resistive portion, a first terminal coupled to a first voltage (e.g., a reference voltage) and formed in the source/drain region and on a first side of the resistive portion, and a second terminal generating a voltage representative of a temperature of the integrated electronic device, the second terminal being formed in the source/drain region and on a second side of the resistive portion. Adjustment circuitry generates the adjustment voltage as having a value dependent on the control voltage and on the voltage generated by the second terminal.

Abstract: A method can be used to irreversibly program a memory cell that includes a MOS transistor having a first source/drain region and a second source/drain region separated by a channel region that is adjacent a gate region. The method includes applying an electric current along a width of the first source/drain region to cause a resistivity of the first source/drain region to be irreversibly increased.

Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

Abstract: An integrated electronic device includes a silicon-on-insulator (SOI) substrate. At least one MOS transistor is formed in and on the SOI substrate. The at least one MOS transistor has a gate region receiving a control voltage, a back gate receiving an adjustment voltage, a source/drain region having a resistive portion, a first terminal coupled to a first voltage (e.g., a reference voltage) and formed in the source/drain region and on a first side of the resistive portion, and a second terminal generating a voltage representative of a temperature of the integrated electronic device, the second terminal being formed in the source/drain region and on a second side of the resistive portion. Adjustment circuitry generates the adjustment voltage as having a value dependent on the control voltage and on the voltage generated by the second terminal.