Patents by Inventor Renat Bilyalov

Renat Bilyalov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTOVOLTAIC DEVICE
    Publication number: 20100140619
    Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
    Type: Application
    Filed: January 12, 2010
    Publication date: June 10, 2010
    Applicants: IMEC, FernUniversitat Hagen
    Inventors: Renat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner
  • Photovoltaic device
    Patent number: 7705235
    Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
    Type: Grant
    Filed: September 8, 2003
    Date of Patent: April 27, 2010
    Assignees: IMEC, FernUniversitat Hagen
    Inventors: Renat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner
  • Method for making thin film devices intended for solar cells or silicon-on-insulator (SOI) applications
    Publication number: 20060184266
    Abstract: In one inventive aspect, a thin film device is manufactured by (a) forming a porous semiconductor layer in the form of a thin film on an original substrate, the formation being immediately followed by (b) separation of the thin film by a lift-off process from the original substrate; (c) transfer of the thin film to a dummy support, the thin film not being attached to the dummy support; (d) fabrication of a device on top of the thin film; and (e) transfer and attachment of said device on said thin film on a foreign substrate.
    Type: Application
    Filed: March 29, 2006
    Publication date: August 17, 2006
    Inventors: Chetan Solanki, Renat Bilyalov, Jef Poortmans
  • Method for making thin film devices intended for solar cells or silicon-on-insulator (SOI) applications
    Patent number: 7022585
    Abstract: In one inventive aspect, a thin film device is manufactured by (a) forming a porous semiconductor layer in the form of a thin film on an original substrate, the formation being immediately followed by (b) separation of the thin film by a lift-off process from the original substrate; (c) transfer of the thin film to a dummy support, the thin film not being attached to the dummy support; (d) fabrication of a device on top of the thin film; and (e) transfer and attachment of said device on said thin film on a foreign substrate.
    Type: Grant
    Filed: July 24, 2003
    Date of Patent: April 4, 2006
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Chetan Singh Solanki, Renat Bilyalov, Jef Poortmans
  • Method for making thin film devices intended for solar cells or silicon-on-insulator (SOI) applications
    Publication number: 20050020032
    Abstract: In one inventive aspect, a thin film device is manufactured by (a) forming a porous semiconductor layer in the form of a thin film on an original substrate, the formation being immediately followed by (b) separation of the thin film by a lift-off process from the original substrate; (c) transfer of the thin film to a dummy support, the thin film not being attached to the dummy support; (d) fabrication of a device on top of the thin film; and (e) transfer and attachment of said device on said thin film on a foreign substrate.
    Type: Application
    Filed: July 24, 2003
    Publication date: January 27, 2005
    Inventors: Chetan Solanki, Renat Bilyalov, Jef Poortmans
  • Photovoltaic device
    Publication number: 20040103937
    Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
    Type: Application
    Filed: September 8, 2003
    Publication date: June 3, 2004
    Applicants: Interuniversitair Microelektronica Centrum (IMEC), FernUniversitat Hagen
    Inventors: Renat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner
  • Method for the formation and lift-off of porous silicon layers
    Patent number: 6649485
    Abstract: A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F−) ions between the surface of the semiconductor substrate and an anode. The method further comprises applying a predetermined current between the anode and the cathode. The method further comprises maintaining the predetermined current at substantially the same current value for a sufficient amount of time to obtain a low porosity layer at said surface. A high porosity layer positioned under the low porosity layer is also obtained by the method of the invention.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: November 18, 2003
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Chetan Singh Solanki, Renat Bilyalov, Jef Poortmans, Guy Beaucarne
  • Method of producing a semiconductor layer on a substrate
    Patent number: 6602760
    Abstract: A method of producing a semiconductor layer onto a semiconductor substrate. The method comprises providing a first semiconductor substrate, and providing a second semiconductor substrate. The method also comprises producing a porous layer, which has a porosity profile, on top of the first semiconductor substrate, and producing a porous layer, which has a porosity profile, on top of the second semiconductor substrate. The method further comprises bringing the porous layer of the second substrate into contact with the porous layer of the first substrate, so as to form a bond between the two substrates, performing a thermal annealing step, and lifting off of the second substrate, leaving a layer of the second substrate's semiconductor material attached to the first substrate.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: August 5, 2003
    Assignees: Interuniversitair Microelektronica Centrum (IMEC), Umicore
    Inventors: Jef Poortmans, Giovanni Flamand, Renat Bilyalov
  • Method of producing a semiconductor layer on a substrate
    Publication number: 20020106882
    Abstract: A method of producing a semiconductor layer onto a semiconductor substrate, comprising the steps of:
    Type: Application
    Filed: December 19, 2001
    Publication date: August 8, 2002
    Inventors: Jef Poortmans, Giovanni Flamand, Renat Bilyalov
  • Method for the formation and lift-off of porous silicon layers
    Publication number: 20010036747
    Abstract: The present invention concerns a method for the manufacture of porous layers in a semiconductor substrate, comprising the following steps:
    Type: Application
    Filed: March 9, 2001
    Publication date: November 1, 2001
    Inventors: Chetan Singh Solanky, Renat Bilyalov, Jef Poortmans, Guy Beaucarne