Abstract: A method of analysis of defects of a type from among a plurality of types of defects between two samples based on an image of each sample characteristic of a type of defect from among the plurality of types of defects includes: for each sample, creating a minimap including bins and representative of a type of defect whose resolution is less than the image of the sample, each bin of the minimap being associated with pixels of the image of the sample and having a score dependent on the pixels and representative of the quantity of a type of defects; determining the distance between each minimap representing the same type or types of defects, the distance between two minimaps being defined as the minimum distance between two minimaps by considering the following transformations: a rotation and/or a symmetry so that each distance between two minimaps is associated with a transformation.

Abstract: A photoluminescence measurement device may include: a sample holder; a detector configured to collect a photoluminescence signal; a processing unit configured to process a signal collected by the detector; and a support disposed facing a rear face of the sample holder, opposite to the front face, and on one face, called the main face, of which rests at least one radiation source for emitting light radiation illuminating the rear face and likely to be collected, by transparency of the sample holder with respect to the light radiation, by the detector.

Abstract: A method for photoluminescence measurement of a sample that includes a front face and a rear face linked by a contour, the sample resting, via the rear face of same, on a receiving face of an active base. The sample also includes a first region partially delimited by the contour and that emits a photoluminescence signal of an intensity, referred to as the first intensity, that is lower at any point to the average intensity of the photoluminescence signal of the sample, referred to as the reference intensity, the active base emitting a photoluminescence signal of an intensity, referred to as the secondary intensity, that is at least equal to the reference intensity. The active base includes an edge that is set apart from the contour by an overlap distance and that delimits, with said contour, a peripheral section of the active base.

Abstract: A method of analysis of defects of a type from among a plurality of types of defects between two samples based on an image of each sample characteristic of a type of defect from among the plurality of types of defects includes: for each sample, creating a minimap including bins and representative of a type of defect whose resolution is less than the image of the sample, each bin of the minimap being associated with pixels of the image of the sample and having a score dependent on the pixels and representative of the quantity of a type of defects; determining the distance between each minimap representing the same type or types of defects, the distance between two minimaps being defined as the minimum distance between two minimaps by considering the following transformations: a rotation and/or a symmetry so that each distance between two minimaps is associated with a transformation.

Abstract: A method for photoluminescence measurement of a sample that includes a front face and a rear face linked by a contour, the sample resting, via the rear face of same, on a receiving face of an active base. The sample also includes a first region partially delimited by the contour and that emits a photoluminescence signal of an intensity, referred to as the first intensity, that is lower at any point to the average intensity of the photoluminescence signal of the sample referred to as the reference intensity, the active base emitting a photoluminescence signal of an intensity, referred to as the secondary intensity, that is at least equal to the reference intensity. The active base includes an edge that is set apart from the contour by an overlap distance and that delimits, with said contour, a peripheral section of the active base.

Abstract: The precursor comprises at least one layer of doped crystalline silicon and a layer of doped amorphous semiconductor material. The method comprises the steps of placing the cell precursor sandwiched between a grounded conducting plate and a plate made of insulating material coated with a conducting layer, then applying a state change electrical voltage (U1) between the conducting layer and ground, the said state change electrical voltage (U1) being designed to bring the Fermi level at the interface between crystalline silicon and amorphous semiconductor material closer to the middle of the band gap of the said amorphous semiconductor material, while at the same time heating the cell precursor to a defect equilibration temperature (TE), and finally cooling down the cell precursor (10) prior to interrupting the application of the state change electrical voltage (U1).

Abstract: The precursor comprises at least one layer of doped crystalline silicon and a layer of doped amorphous semiconductor material. The method comprises the steps of placing the cell precursor sandwiched between a grounded conducting plate and a plate made of insulating material coated with a conducting layer, then applying a state change electrical voltage (U1) between the conducting layer and ground, the said state change electrical voltage (U1) being designed to bring the Fermi level at the interface between crystalline silicon and amorphous semiconductor material closer to the middle of the band gap of the said amorphous semiconductor material, while at the same time heating the cell precursor to a defect equilibration temperature (TE), and finally cooling down the cell precursor (10) prior to interrupting the application of the state change electrical voltage (U1).