Abstract: A method for the manufacturing, by epitaxy, of monocrystalline layers of materials with different lattice parameters that includes:a first step for the epitaxial deposition, on a first layer made of a material having a determined lattice parameter, of a second layer with a determined thickness made of a material having a lattice parameter different from that of the first layer,a second step of ion implanation designed to create a zone, in the second layer, limiting the spread of the dislocations, and at least,one third step for the epitaxial deposition, on the second layer, of a third layer made of the same material as the second layer. The disclosed method can be applied to the manufacture of opto-electronic or microwave devices made of GaAs on Si substrates.