Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction.

Abstract: A method for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction.

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction.

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction.

Abstract: A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take pan in the surface reaction.

Abstract: A semiconductor wafer processing apparatus or module for a cluster tool is provided with a single wafer rotating susceptor that thins the gas boundary layer to facilitate the transfer of material to or from the wafer, in, for example, CVD for blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto a rapidly rotating wafer, for example at from 500 to 1500 RPM, thinning a boundary layer for gas flowing radially outwardly from a stagnation point at the wafer center. Smoothly shaped interior reactor surfaces include baffles and plasma cleaning electrodes to minimize turbulence. Inert gases from within the rotating susceptor minimize turbulence by filling gaps in structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor.

Abstract: A semiconductor wafer processing apparatus is provided with a susceptor for supporting a wafer for CVD of films such as blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto an upwardly facing wafer on the susceptor. Smooth interior reactor surfaces include baffles and a susceptor lip and wall shaped to minimize turbulence. Inert gases flow to minimize turbulence by filling gaps in susceptor structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD.

Abstract: A semiconductor wafer processing apparatus, particularly a CVD reactor, is provided with plasma cleaning electrodes integrated into process gas flow shaping structure that smoothly directs the gas past the wafer on a susceptor. The processing apparatus preferably has a showerhead or other inlet to direct a gas mixture onto a wafer and a plurality of baffles to reduce turbulence. Plasma cleaning electrodes are included in the baffles or the showerhead or both, one or more of which preferably have cleaning gas outlet orifices therein, preferably evenly distributed around the axis of the susceptor to provide uniform cleaning gas flow.