Patents by Inventor Reneong Liang

Reneong Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR
    Publication number: 20150243505
    Abstract: A method for forming a FinFET is provided, comprising: providing a substrate; forming a fin structure with a material Ge or GeSi on the substrate; forming a gate stack or a dummy gate on the substrate; defining a first region and a second region in the fin structure; and implanting atoms, molecules, ions or plasmas containing an element Sn into the first region and the second region in the fin structure with the material Ge to form a strained GeSn layer, or implanting atoms, molecules, ions or plasmas containing an element Sn into the first region and the second region in the fin structure with the material GeSi to form a strained GeSnSi layer, or co-implanting atoms, molecules, ions or plasmas containing elements Sn and Si into the first region and the second region in the fin structure with the material GeSi to form a strained GeSnSi layer.
    Type: Application
    Filed: March 21, 2014
    Publication date: August 27, 2015
    Applicant: Tsinghua University
    Inventors: Jing Wang, Lei Xiao, Mei Zhao, Reneong Liang, Jun Xu