Abstract: A method and apparatus for fabricating sensor chip assemblies. A photodetector wafer and an optics wafer are bonded to each other. Photodetectors are formed on the photodetector wafer. A circuit wafer is bonded to the photodetector wafer that is bonded to the optics wafer after forming the photodetectors on the photodetector wafer.

Abstract: A laser distance and ranging (LADAR) array is provided. The LADAR array includes a plurality of LADAR modules, each LADAR module configured to scan a laser beam through a field of view (FOV) and output a signal indicative of a distance between each LADAR module and objects in the FOV that the laser beam is incident upon, and a central processing device communicatively coupled to the plurality of LADAR modules, the central processing device configured to generate an output based at least in part on the signals of each LADAR module.

Abstract: A system, method, and apparatus for an avalanche photodiode with an enhanced multiplier layer are disclosed herein. In particular, the present disclosure teaches an avalanche photodiode having a multiplier with alternating layers of one or more quantum wells and one or more spacers. A method of making the avalanche photodiode includes growing the multiplier on a substrate.

Abstract: An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

Abstract: A laser distance and ranging (LADAR) array is provided. The LADAR array includes a plurality of LADAR modules, each LADAR module configured to scan a laser beam through a field of view (FOV) and output a signal indicative of a distance between each LADAR module and objects in the FOV that the laser beam is incident upon, and a central processing device communicatively coupled to the plurality of LADAR modules, the central processing device configured to generate an output based at least in part on the signals of each LADAR module.

Abstract: A method and apparatus for fabricating sensor chip assemblies. A photodetector wafer and an optics wafer are bonded to each other. Photodetectors are formed on the photodetector wafer. A circuit wafer is bonded to the photodetector wafer that is bonded to the optics wafer after forming the photodetectors on the photodetector wafer.

Abstract: An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

Abstract: An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

Abstract: A dichromatic photodiode and method for dichromatic photodetection are disclosed. A wide bandgap junction comprises a lattice matched junction operable to detect a first light spectrum. A narrow bandgap junction is coupled to the wide bandgap junction, and comprises a photodiode structure. The narrow bandgap junction is operable to detect a second light spectrum.

Abstract: A dichromatic photodiode and method for dichromatic photodetection are disclosed. A wide bandgap junction comprises a lattice matched junction operable to detect a first light spectrum. A narrow bandgap junction is coupled to the wide bandgap junction, and comprises a photodiode structure. The narrow bandgap junction is operable to detect a second light spectrum.

Abstract: A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A P+ diffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the P+ diffusion region.

Abstract: A photodiode and method of forming a photodiode has a substrate. An absorption layer is formed on the substrate to absorb lightwaves of a desired frequency range. A multiplication structure is formed on the absorption layer. The multiplication layer uses a low dark current avalanching material. The absorption layer and the multiplication layer are formed into at least one mesa having in an inverted “T” configuration to reduce junction area between the absorption layer and the multiplication layer. A dielectric layer is formed over the at least one mesa. At least one contact is formed on the dielectric layer and coupled to the at least one mesa.

Abstract: An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

Abstract: A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A P+ diffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the P+ diffusion region.

Abstract: An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

Abstract: A photodiode and method of forming a photodiode has a substrate. An absorption layer is formed on the substrate to absorb lightwaves of a desired frequency range. A multiplication structure is formed on the absorption layer. The multiplication layer uses a low dark current avalanching material. The absorption layer and the multiplication layer are formed into at least one mesa having in an inverted “T” configuration to reduce junction area between the absorption layer and the multiplication layer. A dielectric layer is formed over the at least one mesa. At least one contact is formed on the dielectric layer and coupled to the at least one mesa.

Abstract: An avalanche photodiode having a reduced capacitance is provided. The avalanche photodiode includes a wide band gap layer in its depletion region. The width of the wide band gap layer increases the extent of the depletion region, thereby reducing the capacitance while minimizing the impact on the dark current.

Abstract: Laser power conversion with multiple stacked junctions or subcells are disclosed to produce increased output. Both vertical and horizontal integration are disclosed for flexible, efficient, and cost-effective laser power conversion. One embodiment of a laser power converter includes at least a first or top subcell that receives incident laser light, a second subcell below the first subcell that subsequently receives the laser light, and a tunnel junction between the first and second subcells.

Abstract: An avalanche photodiode having a reduced capacitance is provided. The avalanche photodiode includes a wide band gap layer in its depletion region. The width of the wide band gap layer increases the extent of the depletion region, thereby reducing the capacitance while minimizing the impact on the dark current.

Abstract: A diffused junction semiconductor (12) for detecting light (48) at a predetermined wavelength is provided including a base (30) and an epitaxial structure (32) electrically coupled to the base (30). The epitaxial structure (32) forms a p-n junction (38) in the base (30). The epitaxial structure (32) includes at least one diffusion layer (50) electrically coupled to the base (30). At least one of the diffusion layers (50) contributes impurities in at least a portion of the base (30) to form the p-n junction (38) during growth of the epitaxial structure (32). A method for performing the same is also provided.