Abstract: A semiconductor laser shaping device includes, along the light path of a semiconductor laser, a fast axis collimating lens, slow axis collimating lens, the half wave plate, a polarization beam combining prism, and a crawling prism group. The laser emitted by the semiconductor laser is collimated by a fast-axis collimating lens and then by a slow-axis collimating lens, and subsequently injected into a half wave plate and polarization beam combining prism, which compresses its spot size along the slow axis while keeping the spot size unchanged along the fast axis. The laser beam then passes through the crawling prism group, which shifts a portion of the light in the slow-axis direction to the fast-axis direction, which again compresses the light beam in the slow-axis direction. The device can reduce the beam size of a semiconductor laser in the slow-axis direction, reducing its beam parameter product and improving beam quality.

Abstract: A semiconductor laser shaping device includes, along the light path of a semiconductor laser, a fast axis collimating lens, slow axis collimating lens, the half wave plate, a polarization beam combining prism, and a crawling prism group. The laser emitted by the semiconductor laser is collimated by a fast-axis collimating lens and then by a slow-axis collimating lens, and subsequently injected into a half wave plate and polarization beam combining prism, which compresses its spot size along the slow axis while keeping the spot size unchanged along the fast axis. The laser beam then passes through the crawling prism group, which shifts a portion of the light in the slow-axis direction to the fast-axis direction, which again compresses the light beam in the slow-axis direction. The device can reduce the beam size of a semiconductor laser in the slow-axis direction, reducing its beam parameter product and improving beam quality.