Abstract: A high-strength Cu based alloy, consists of:Ni: 0.5 to 2.0%;Sn: 1.2 to 2.5%;Si: 0.04 to 0.1%;Zn: 0.1 to 1%;Mg: 0.0001 to 0.02%;Mn: 0.0001 to 0.1%;P: 0.0001 to 0.02%; andCu and inevitable impurities: the balance,wherein the total content of Mg, Mn and P is 0.001 to 0.12%. The Cu based alloy is suitable for use as a material of electrical and electronic parts, and free from smutting during pretreatment for plating thereof.

Abstract: A copper based alloy consists essentially, by weight %, of 15 to 35% Zn, 7 to 14% Ni, 0.1 to 2% or less Mn, 0.01 to 0.5% Fe, 0.0005 to 0.1% P, at least one or two elements selected from the group consisting of 0.001 to 0.9% Si, 0.0003 to 0.02% Pb, and 0.0003 to 0.01% C, the total content of the selected at least two elements being limited to a range of 0.0006 to 0.9%, and the balance of Cu and inevitable impurities. The copper based alloy has excellent blankability as well as good corrosion resistance and high strength.

Abstract: There is provided a copper alloy sheet for forming a connector, having a chemical composition consisting essentially of:Mg: 0.3-2% by weight;P: 0.001-0.02% by weight;C: 0.0002-0.0013% by weight;O: 0.0002-0.001% by weight; andCu and inevitable impurities: the balance. The copper alloy sheet has a structure that fine particles of oxides including Mg oxide having a particle size of not more than 3 .mu.m are evenly dispersed in a matrix of the copper alloy sheet. The copper alloy sheet is excellent not only in tensile strength, elongation, electric conductivity and spring limit value before forming, but also in spring limit value after forming, and high-temperature creep strength.

Abstract: A lead frame material comprises a base plate consisting of copper or copper alloys, and a protective coating formed on the upper or the both surface of the base plate. The protective coating is composed of at least one metal selected from the group consisting of gold, gold alloy, silver, silver alloy, palladium and palladium alloy, and has a thickness of 10-500 angstrom. The protective coating is formed by means of vapor deposition. It is possible to form an intermediate coating of nickel or nickel alloys between the surface of the base plate and the protective coating, by means of vapor deposition or wet plating. The suitable thickness of the intermediate coating is within the range of 50-20000 angstrom.

Abstract: There is provided a lead frame material formed of a Cu alloy for a resin sealed type semiconductor device, wherein the Cu alloy consists essentially of 2 to 4% Ni, more than 0.5 to 1%, Si, 0.1 to 2% Zn, more than 0.01 to 0.05%, Mg, 0.05 to 1% Sn, and the balance of Cu and inevitable impurities, the inevitable impurities containing 20 ppm or less sulfur (S) and 20 ppm or less carbon (C). The lead frame material formed of the Cu alloy has improved adhesion strength to an epoxy resin as a sealing material. A semiconductor device prepared from said lead frame material is also provided.

Abstract: A copper alloy material for lead frames for semiconductor devices. The lead frame material consists essentially of:Ni: 0.5-2 percent by weight;Sn: 1.2-2.5 percent by weight;Si: 0.05-0.5 percent by weight;Zn: 0.1-1 percent by weight;Ca: 0.001-0.01 percent by weight;Mg: 0.001-0.05 percent by weight;Pb: 0.001-0.01 percent by weight; andCu and inevitable impurities: the balance.The lead frame material obtained possesses not only high strength, but also excellent thermal-exfoliation resistance of the solder, and also enhances the wear resistance of the stamping dies, while possessing excellent other properties, such as repeated-bending strength, thermal conductivity and electrical conductivity, platability, and solderability, which are required of lead frames.

Abstract: A copper base lead material for leads of a semiconductor device, which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is within a range from 0.5 to 0.85, preferably within a range from 0.60 to 0.85, so as to form a compound of magnesium and phosphorus or Mg.sub.3 P.sub.2. The copper base lead material possesses satisfactory properties required of a metal material for leads in semiconductor devices, such as strength, thermal resistance, and stampability, and further possesses excellent heat radiation to an extent suitable for use as leads of semiconductor devices having high wiring densities. The invention also includes the semiconductor device containing said leads.

Abstract: A copper alloy lead material for leads of a semiconductor device, which consists essentially of from 2 to 2.4 percent by weight iron, from 0.001 to 0.1 percent by weight phosphorus, from 0.01 to 1 percent by weight zinc, from 0.001 to 0.1 percent by weight magnesium, and the balance of copper and inevitable impurities. The copper alloy lead material possesses satisfactory properties such as elongation and electrical conductivity required of a material for leads in a semiconductor device, and further exhibits excellent strength and heat resistance enough to be used as leads in semiconductor devices having high wiring densities, and at the same time possesses improved soldering reliability to the substrate of the semiconductor device as compared to a conventional copper alloy lead material.

Abstract: A copper base alloy for leads of an integrated circuit consisting essentially of from 0.5 to 1.5% by weight of iron, from 0.5 to 1.5% by weight of tin, from 0.01 to 0.35% by weight of phosphorus, and the balance of copper and inevitable impurities. Said alloy possesses satisfactory properties which are required of leads of integrated circuits.