Patents by Inventor Renu W. Dave

Renu W. Dave has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanocrystalline layers for improved MRAM tunnel junctions
    Patent number: 6801415
    Abstract: An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer, and fixed layer.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: October 5, 2004
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Jon M. Slaughter, Renu W. Dave, Jijun Sun
  • Nanocrystalline layers for improved MRAM tunnel junctions
    Publication number: 20040042128
    Abstract: An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer, and fixed layer.
    Type: Application
    Filed: August 30, 2002
    Publication date: March 4, 2004
    Inventors: Jon M. Slaughter, Renu W. Dave, Jijun Sun
  • Amorphous alloys for magnetic devices
    Publication number: 20040041183
    Abstract: An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.
    Type: Application
    Filed: August 30, 2002
    Publication date: March 4, 2004
    Inventors: Jon M. Slaughter, Renu W. Dave, Srinivas V. Pietambaram