Patents by Inventor Renyan WANG

Renyan WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and fabrication method thereof
    Patent number: 12713899
    Abstract: The present disclosure relates to semiconductor devices and fabrication methods thereof. An example semiconductor device includes conductive layers. The conductive layers include a first conductive layer and a second conductive layer. The semiconductor device further includes an insulating structure over the first conductive layer and the second conductive layer. The insulating structure includes a first layer. A material of the first layer has a first etching rate smaller than an etching rate of an insulating material between the conductive layers. The semiconductor device further includes a first contact structure extending through a first portion of the first layer and connected to the first conductive layer. The semiconductor device further includes a second contact structure extending through a second portion of the first layer and connected to the second conductive layer.
    Type: Grant
    Filed: February 15, 2024
    Date of Patent: August 18, 2026
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Renyan Wang, Wei Xu, Zhipeng Wu, Hang Yin, Chao Sun
  • SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20250233067
    Abstract: The present disclosure relates to semiconductor devices and fabrication methods thereof. An example semiconductor device includes conductive layers. The conductive layers include a first conductive layer and a second conductive layer. The semiconductor device further includes an insulating structure over the first conductive layer and the second conductive layer. The insulating structure includes a first layer. A material of the first layer has a first etching rate smaller than an etching rate of an insulating material between the conductive layers. The semiconductor device further includes a first contact structure extending through a first portion of the first layer and connected to the first conductive layer. The semiconductor device further includes a second contact structure extending through a second portion of the first layer and connected to the second conductive layer.
    Type: Application
    Filed: February 15, 2024
    Publication date: July 17, 2025
    Inventors: Renyan WANG, Wei XU, Zhipeng WU, Hang YIN, Chao SUN