Patents by Inventor Reo Kosaka

Reo Kosaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pattern enhancement using a gas cluster ion beam
    Patent number: 11694872
    Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.
    Type: Grant
    Filed: May 17, 2022
    Date of Patent: July 4, 2023
    Assignee: TEL Manufacturing and Engineering of America, Inc.
    Inventors: Kazuya Dobashi, Hiromitsu Kambara, Masaru Nishino, Reo Kosaka, Matthew Gwinn, Luis Fernandez, Kenichi Oyama, Sakurako Natori, Noriaki Okabe
  • Pattern enhancement using a gas cluster ion beam
    Patent number: 11450506
    Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: September 20, 2022
    Assignee: TEL MANUFACTURING AND ENGINEERING OF AMERICA, INC.
    Inventors: Kazuya Dobashi, Hiromitsu Kambara, Masaru Nishino, Reo Kosaka, Matthew Gwinn, Luis Fernandez, Kenichi Oyama, Sakurako Natori, Noriaki Okabe
  • Pattern Enhancement Using a Gas Cluster Ion Beam
    Publication number: 20220277924
    Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.
    Type: Application
    Filed: May 17, 2022
    Publication date: September 1, 2022
    Inventors: Kazuya Dobashi, Hiromitsu Kambara, Masaru Nishino, Reo Kosaka, Matthew Gwinn, Luis Fernandez, Kenichi Oyama, Sakurako Natori, Noriaki Okabe
  • Pattern Enhancement Using a Gas Cluster Ion Beam
    Publication number: 20210335568
    Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.
    Type: Application
    Filed: September 11, 2020
    Publication date: October 28, 2021
    Inventors: Kazuya Dobashi, Hiromitsu Kambara, Masaru Nishino, Reo Kosaka, Matthew Gwinn, Luis Fernandez, Kenichi Oyama, Sakurako Natori, Noriaki Okabe