Abstract: Embodiments of the present disclosure generally relate to evaporation sources used for physical vapor deposition of material onto substrates and more particularly for controlled coating of large substrates, such as vacuum deposition of copper, indium, gallium, selenium, tellurium, cadmium, or zinc on flexible substrates. Embodiments disclosed herein are able to control the evaporation rate of the source material during processing so as to obtain a uniform deposition across the width of the substrate as the complete length of a roll-to-roll substrate is moved past the evaporation source during processing.

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100).

Abstract: Embodiments of the present disclosure generally relate to evaporation sources used for physical vapor deposition of material onto substrates and more particularly for controlled coating of large substrates, such as vacuum deposition of copper, indium, gallium, selenium, tellurium, cadmium, or zinc on flexible substrates. Embodiments disclosed herein are able to control the evaporation rate of the source material during processing so as to obtain a uniform deposition across the width of the substrate as the complete length of a roll-to-roll substrate is moved past the evaporation source during processing.

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100).

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100).

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistivity than th at of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100).

Abstract: The invention relates to a method for forming a pattern on a substrate (S) with an upper surface and a lower surface which comprises the steps of depositing a first layer (E1) of an opaque material on the upper surface of the substrate (S), depositing a photosensitive layer (R) such that part of the photosensitive layer (R) covers at least part of the first layer (E1), exposing the photosensitive layer (R) to a light beam (L), the light beam (L) impinging on the lower surface of the substrate (S) under an oblique angle (?) of incidence, removing the exposed region of the photosensitive layer (R), depositing a second layer (E2) of an opaque material such that part of the second layer (E2) covers a remaining region of the photosensitive layer (R), and removing at least a part of the remaining region of the photosensitive layer (R).

Abstract: The invention relates to a method for forming a pattern on a substrate (S) with an upper surface and a lower surface which comprises the steps of depositing a first layer (E1) of an opaque material on the upper surface of the substrate (S), depositing a photosensitive layer (R) such that part of the photosensitive layer (R) covers at least part of the first layer (E1), exposing the photosensitive layer (R) to a light beam (L), the light beam (L) impinging on the lower surface of the substrate (S) under an oblique angle (?) of incidence, removing the exposed region of the photosensitive layer (R), depositing a second layer (E2) of an opaque material such that part of the second layer (E2) covers a remaining region of the photosensitive layer (R), and removing at least a part of the remaining region of the photosensitive layer (R).