Patents by Inventor Rex Chen

Rex Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12084147
    Abstract: A hub motor is disclosed, the hub motor is mounted on an axle assembly, the an axle assembly includes an axle rod and an axle sleeve, and an independent cassette flywheel is provided at one end of the axle sleeve where an end cover is located, a limiting sleeve is disposed outside of the cassette flywheel to prevent the cassette flywheel from detaching from the axle sleeve, and an anti-rotation piece for preventing rotation of the axle sleeve is provided at another end of the axle sleeve where a wheel hub is located.
    Type: Grant
    Filed: March 30, 2022
    Date of Patent: September 10, 2024
    Inventor: Rex Chen
  • Publication number: 20230024959
    Abstract: A hub motor is disclosed, the hub motor is mounted on an axle assembly, the an axle assembly includes an axle rod and an axle sleeve, and an independent cassette flywheel is provided at one end of the axle sleeve where an end cover is located, a limiting sleeve is disposed outside of the cassette flywheel to prevent the cassette flywheel from detaching from the axle sleeve, and an anti-rotation piece for preventing rotation of the axle sleeve is provided at another end of the axle sleeve where a wheel hub is located.
    Type: Application
    Filed: March 30, 2022
    Publication date: January 26, 2023
    Inventor: Rex Chen
  • Patent number: 8195131
    Abstract: A method includes receiving a broadcast message at a receiver device. The message includes identification information identifying a message-type associated with the message, reply-to information, and user information. The method further includes determining the received message is a broadcast message based on the message-type of the message and determining the message includes the reply-to information describing a reply-to address. The method additionally includes passing the user information contained within the message to a user interface when the message is a broadcast message including reply-to information and receiving an instruction from the user interface. The instruction is based on the user information and user input responsive to the user information. The method further includes producing and sending a reply message addressed to the reply-to address responsive to the instruction.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: June 5, 2012
    Assignee: QUALCOMM Incorporated
    Inventors: Pratik Mahesh Dhebri, Hai Qu, Rex Chen
  • Publication number: 20070202886
    Abstract: An SMS CBS message includes location information that defines a relevant geographic area. A receiving device that is location aware is configured to receive the SMS CBS message and announce the message if the receiving device is within the relevant geographic area.
    Type: Application
    Filed: February 24, 2006
    Publication date: August 30, 2007
    Inventors: Pratik Mahesh Dhebri, Hai Qu, Rex Chen
  • Publication number: 20070202894
    Abstract: A method includes receiving a broadcast message at a receiver device. The message includes identification information identifying a message-type associated with the message, reply-to information, and user information. The method further includes determining the received message is a broadcast message based on the message-type of the message and determining the message includes the reply-to information describing a reply-to address. The method additionally includes passing the user information contained within the message to a user interface when the message is a broadcast message including reply-to information and receiving an instruction from the user interface. The instruction is based on the user information and user input responsive to the user information. The method further includes producing and sending a reply message addressed to the reply-to address responsive to the instruction.
    Type: Application
    Filed: February 24, 2006
    Publication date: August 30, 2007
    Inventors: Pratik Mahesh Dhebri, Hai Qu, Rex Chen
  • Patent number: 6821892
    Abstract: A method is disclosed for accurately predicting the wet etch end points as a function of the temperature and concentration of the etching solution, as well as of the thickness of the film to be etched. This is accomplished by fitting an etch rate equation to the process of etching a film in terms of two constant parameters that are determined by one set of experiments performed on a given wet etch bench. Thereafter, the constants are used with the rate equation to calculate precisely the etch rate of a film, and then the etch rate is divided into a target film loss or a target film thickness to obtain etching time, or time to etch, which takes into account the variations in temperature and concentration, for example, of the acid in the solution. The resulting film either looses the specified amount of material, or acquires the specified thickness without incurring any damage, which is especially suited for sub-micron semiconductor technology where precise etching is required.
    Type: Grant
    Filed: June 4, 2001
    Date of Patent: November 23, 2004
    Assignee: Promos Technologies, Inc.
    Inventors: Chun Hong Peng, Rex Chen, Simon Chang
  • Patent number: 5646074
    Abstract: Disclosed is a process for manufacturing a gate oxide of a MOSFET. Since the performance of the gate oxide is deteriorated in photo resist removing, DI healing and high temperature annealing are introduced to recover the gate oxide. A process for manufacturing the gate oxide of the MOSFET on a wafer, includes the steps of: pre-cleaning the wafer, forming gate oxide layer, coating a photo resist, exposing the photo resist, developing the photo resist, implanting ions over the developed photo resist, removing the photo resist, post-cleaning the gate oxide for the purpose of good attachment of a gate polysilicon layer, DI healing the gate oxide, and annealing the gate oxide at a high temperature. As a result, the pass rates for Ebd and Qbd tests of the gate oxide increase.
    Type: Grant
    Filed: December 15, 1995
    Date of Patent: July 8, 1997
    Assignee: Mosel Vitelic, Inc.
    Inventors: Rickey Chen, Rex Chen
  • Patent number: D1098317
    Type: Grant
    Filed: January 11, 2024
    Date of Patent: October 14, 2025
    Inventor: Rex Chen