Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a first ring body formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the first ring body is bonded to and extends from one of the inner portion or outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the first ring body.

Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si); a connector having a circular configuration and formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the connector is bonded to at least one of the inner portion and outer portion of the gas distribution plate; and a backing plate configured to connect to the gas distribution plate via the connector.

Abstract: A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si), wherein a bonding layer is provided on a back surface of at least one of the inner portion or outer portion; a backing plate formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the backing plate is bonded to at least one of the back surface of at least one of the inner portion or outer portion of the gas distribution plate.

Abstract: The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.

Abstract: The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.

Abstract: Apparatus for stray plasma prevention for substrate processing chambers are provided herein. In some embodiments, an apparatus for preventing stray plasma in a substrate processing chamber includes: a tubular body formed of a dielectric material and defining a central opening passing therethrough from a first end to a second end of the tubular body; and a flange extending radially from the first end of the tubular body. The apparatus can be formed from a process compatible plastic material, such as polyoxymethylene (POM), polyetheretherketone (PEEK), or polytetrafluoroethylene (PTFE).

Abstract: Embodiments disclosed herein generally relate to a substrate processing chamber component assembly with a split slit liner door assembly. In one embodiment, the split slit liner door assembly has a first door portion having a top surface, a rear face and a font face, a RF conductive gasket is disposed on the front face of the first door portion, a second door portion having sides, a bottom and a front surface, the bottom coupled to the actuator, and a linkage assembly coupling the first door portion to the second door portion wherein the linkage assembly is configured to translate a vertical motion of the second door portion relative to a first door portion and a horizontal motion spacing the first door portion from the second door portion.

Abstract: The present disclosure generally relates to apparatuses and methods for controlling a plasma sheath near a substrate edge. The apparatus relates to a processing chamber and/or a substrate support that includes an edge ring assembly with an edge ring electrode and an electrostatic chuck with a chucking electrode. The edge ring assembly is positioned adjacent the electrostatic chuck, such as with the edge ring assembly positioned exterior to or about the electrostatic chuck. The edge ring assembly includes a base and a cap positioned above the base with the edge ring electrode positioned between the cap and the base. The base of the edge ring electrode may include an inner recess and/or an outer recess with the cap including one or more lips that extend into the inner recess and/or the outer recess. One or more silicon rings and/or insulating rings are positioned adjacent the edge ring assembly.