Patents by Inventor Reynaldo Villavelez

Reynaldo Villavelez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell that prevents charge loss
    Patent number: 9559106
    Abstract: A memory cell including a substrate, a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The substrate includes a channel region situated between a drain region and a source region. The first dielectric layer is situated over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The second dielectric layer is situated over the floating gate and the control gate is capacitively coupled to the floating gate through the second dielectric layer. A dielectric nitride layer is situated between the floating gate and the second dielectric layer to prevent charge loss from the floating gate to the second dielectric layer.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: January 31, 2017
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Chaw-Sing Ho, Reynaldo Villavelez, Xin Ping Cao
  • MEMORY CELL THAT PREVENTS CHARGE LOSS
    Publication number: 20150123186
    Abstract: A memory cell including a substrate, a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The substrate includes a channel region situated between a drain region and a source region. The first dielectric layer is situated over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The second dielectric layer is situated over the floating gate and the control gate is capacitively coupled to the floating gate through the second dielectric layer. A dielectric nitride layer is situated between the floating gate and the second dielectric layer to prevent charge loss from the floating gate to the second dielectric layer.
    Type: Application
    Filed: October 31, 2012
    Publication date: May 7, 2015
    Inventors: Chaw-Sing Ho, Reynaldo Villavelez, Xin Ping Cao