Abstract: A high Q resonator device is disclosed. The device includes a substrate, a resonator tethered to the substrate by a tether, and an acoustic reflector etched into the substrate and positioned proximate the tether so as to reflect a substantial portion of planar acoustic energy received from the tether back into the tether.

Abstract: Disclosed are micromechanical resonator apparatus having features that permit multiple resonators on the same substrate to operate at different operating frequencies. Exemplary micromechanical resonator apparatus includes a support substrate and suspended micromechanical resonator apparatus having a resonance frequency. In one embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a piezoelectric layer formed on the suspended device substrate, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. In another embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a lower electrode formed on the suspended device substrate, a piezoelectric layer formed on the lower electrode, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer.

Abstract: Disclosed are micromechanical resonator apparatus having features that permit multiple resonators on the same substrate to operate at different operating frequencies. Exemplary micromechanical resonator apparatus includes a support substrate and suspended micromechanical resonator apparatus having a resonance frequency. In one embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a piezoelectric layer formed on the suspended device substrate, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. In another embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a lower electrode formed on the suspended device substrate, a piezoelectric layer formed on the lower electrode, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer.

Abstract: Oscillators include a resonator having first and second electrodes and configured to resonate at a first frequency at which the first and second electrodes carry in-phase signals and at a second frequency at which the first and second electrodes carry out-of-phase signals. A driver circuit is configured to selectively sustain either the in-phase signals on the first and second electrodes or the out-of-phase signals on the first and second electrodes so that the resonator selectively resonates at either the first frequency or the second frequency, respectively. Related oscillator operating methods are also disclosed.

Abstract: Disclosed are piezoelectrically-transduced micromachined bulk acoustic resonators fabricated on a polycrystalline diamond film deposited on a carrier substrate. Exemplary resonators comprise a substrate having a smooth diamond layer disposed thereon. A piezoelectric layer is disposed on the diamond layer and top and bottom electrodes sandwich the piezoelectric layer. The resonant structure comprising the diamond layer, piezoelectric layer and electrodes are released from the substrate and are free to vibrate. Additionally, one or more sensing platforms may be coupled to the substrate to form a mass sensor.

Abstract: Disclosed are micromechanical resonator apparatus having features that permit multiple resonators on the same substrate to operate at different operating frequencies. Exemplary micromechanical resonator apparatus includes a support substrate and suspended micromechanical resonator apparatus having a resonance frequency. In one embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a piezoelectric layer formed on the suspended device substrate, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. In another embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a lower electrode formed on the suspended device substrate, a piezoelectric layer formed on the lower electrode, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer.

Abstract: Disclosed are exemplary monolithic acoustically coupled thin film piezoelectric-on-substrate filters that operate in a wide frequency range. The monolithic thin-film-piezoelectric acoustic filters includes a resonant structure that is released from and supported by a substrate that comprises a thin-film piezoelectric layer disposed between a lower electrode and a plurality of electrically isolated upper electrodes. Second order narrowband filters are realized by utilizing coupled resonance modes of a single microstructure. Narrow-bandwidth filters are disclosed that are suitable for channel-select applications in IF and RF bands. Filter Q values of 800 at 250 MHz, 470 at 360 MHz, and 400 at 3.5 GHz for small footprint second-order filters are disclosed. The measured power handling of these devices is high due to the use of high energy density structural material, showing a 0.2 dB compression point of >15 dBm at 360 MHz.

Abstract: Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution (<200 ng/?Hz) and very high sensitivity (>17 pF/g). The microstructures are fabricated in thick (>100 ?m) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is ?91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/?Hz). The IC consumes 6 mW power and measures 0.65 mm2 core area.

Abstract: Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution (<200 ng/?Hz) and very high sensitivity (>17 pF/g). The microstructures are fabricated in thick (>100 ?m) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is ?91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/?Hz). The IC consumes 6 mW power and measures 0.65 mm2 core area.

Abstract: Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.

Abstract: Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution (<200 ng/?Hz) and very high sensitivity (>17 pF/g). The microstructures are fabricated in thick (>100 ?m) silicon-on-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (>10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is ?91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/?Hz). The IC consumes 6 mW power and measures 0.65 mm2 core area.

Abstract: Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.

Abstract: A piezoelectric resonator is disclosed. In one embodiment the piezoelectric resonator includes a resonating member having a bi-directionally adjustable resonance frequency, the resonating member including a semiconductor material of a semiconductor-on-insulator wafer, the semiconductor-on-insulator wafer including an oxide layer adjacent to the semiconductor material and a handle layer adjacent to the oxide layer, the oxide layer disposed between the handle layer and the semiconductor material, and electrode, and a piezoelectric material disposed between the semiconductor material and the electrode, and a capacitor created by the semiconductor material and the handle layer separated by an air gap formed out of the oxide layer, wherein the capacitor is configured to receive a direct current voltage that adjusts the resonance frequency of the resonating member.

Abstract: Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.

Abstract: A piezoelectric resonator is disclosed. In one embodiment the piezoelectric resonator includes a semiconductor material, an electrode, and a piezoelectric material disposed between the semiconductor material and the electrode.