Abstract: A composite comprises a polymer matrix and a luminophore dispersed therein. The composite is useful as a sensing film that is used as an optical sensor for oxygen measurement comprising the composite sensing film; a source of photons for photo-exciting the luminophores and a waveguide, transparent in the frequency range of the excitation photons, for guiding the excitation photons from the source to the composite sensing film; a detector for measuring properties of photons emitted from the luminophores. A system including a computer may be useful for coordinating the activities of the sensor.

Abstract: A composite comprises a polymer matrix and a luminophore dispersed therein. The composite is useful as a sensing film that is used as an optical sensor for oxygen measurement comprising the composite sensing film; a source of photons for photo-exciting the luminophores and a waveguide, transparent in the frequency range of the excitation photons, for guiding the excitation photons from the source to the composite sensing film; a detector for measuring properties of photons emitted from the luminophores. A system including a computer may be useful for coordinating the activities of the sensor.

Abstract: An epitaxial Ni3FeN film with unique magnetic properties such as single magnetic domain (even in a large scale 0.5?×0.5?), which rotates coherently in response to the desired switching field with a very sharp transition is described. The magnetic hysteresis loop of this new magnetic nitride is close to the perfect ideal square with the same value of saturation magnetization, remnant magnetization, and magnetization right before switching (domain reversal). The switching field is tunable which make this material more attractive for magneto-resistive devices such as MRAM's, read heads and magnetic sensors.

Abstract: An epitaxial Ni3FeN film with unique magnetic properties such as single magnetic domain (even in a large scale 0.5?×0.5?), which rotates coherently in response to the desired switching field with a very sharp transition is described. The magnetic hysteresis loop of this new magnetic nitride is close to the perfect ideal square with the same value of saturation magnetization, remnant magnetization, and magnetization right before switching (domain reversal). The switching field is tunable which make this material more attractive for magneto-resistive devices such as MRAM's, read heads and magnetic sensors.

Abstract: An epitaxial Ni3FeN film with unique magnetic properties such as single magnetic domain (even in a large scale 0.5?×0.5?), which rotates coherently in response to the desired switching field with a very sharp transition is described. The magnetic hysteresis loop of this new magnetic nitride is close to the perfect ideal square with the same value of saturation magnetization, remnant magnetization, and magnetization right before switching (domain reversal). The switching field is tunable which make this material more attractive for magneto-resistive devices such as MRAM's, read heads and magnetic sensors.

Abstract: An epitaxial Ni3FeN film with unique magnetic properties such as single magnetic domain (even in a large scale 0.5?×0.5?), which rotates coherently in response to the desired switching field with a very sharp transition is described. The magnetic hysteresis loop of this new magnetic nitride is close to the perfect ideal square with the same value of saturation magnetization, remnant magnetization, and magnetization right before switching (domain reversal). The switching field is tunable which make this material more attractive for magneto-resistive devices such as MRAM's, read heads and magnetic sensors.