Abstract: The present disclosure relates to electro-optic modulators that include caps for optical confinement. One example embodiment includes an electro-optic modulator. The electro-optic modulator includes a first cladding layer. The electro-optic modulator also includes a second cladding layer. In addition, the electro-optic modulator includes a first waveguide. The first waveguide is at least partially encapsulated between the first cladding layer and the second cladding layer. Further, the electro-optic modulator includes a thin-film lithium niobate layer adjacent to the second cladding layer. The thin-film lithium niobate layer is on an opposite side of the second cladding layer from the first waveguide. Additionally, the electro-optic modulator includes a first cap positioned on an opposite side of the thin-film lithium niobate layer from the second cladding layer. The first cap enhances optical confinement within the thin-film lithium niobate layer.

Abstract: The present disclosure relates to electro-optic modulators that include caps for optical confinement. One example embodiment includes an electro-optic modulator. The electro-optic modulator includes a first cladding layer. The electro-optic modulator also includes a second cladding layer. In addition, the electro-optic modulator includes a first waveguide. The first waveguide is at least partially encapsulated between the first cladding layer and the second cladding layer. Further, the electro-optic modulator includes a thin-film lithium niobate layer adjacent to the second cladding layer. The thin-film lithium niobate layer is on an opposite side of the second cladding layer from the first waveguide. Additionally, the electro-optic modulator includes a first cap positioned on an opposite side of the thin-film lithium niobate layer from the second cladding layer. The first cap enhances optical confinement within the thin-film lithium niobate layer.

Abstract: The present disclosure relates to polarization rotator-splitters that include oxide claddings. One example embodiment includes a device. The device includes a first waveguide. The first waveguide includes a first end configured to receive electromagnetic waves having a first polarization with a first mode-order and electromagnetic waves having a second polarization. The first waveguide also includes a mode-conversion section configured to convert electromagnetic waves having the second polarization into electromagnetic waves having the first polarization with a second mode-order. Additionally, the device includes a second waveguide. The second waveguide also includes a coupling section configured such that electromagnetic waves having the first polarization with the second mode-order are converted into electromagnetic waves having the first polarization with the first mode-order and coupled from the coupling section of the first waveguide into the coupling section of the second waveguide.

Abstract: A method of fabricating an electro-optical device is provided. The method comprises providing a silicon-on-insulator (SOI) wafer comprising a silicon layer, a silicon oxide layer and at least one RF (radio frequency) electrode, wherein the at least one RF electrode is arranged inside the upper portion of the silicon oxide layer of the SOI wafer and providing a second substrate having a top structure of a RF (radio frequency) modulating material. The method further comprises bonding the second substrate on top of the SOI wafer such that said top structure of a RF (radio frequency) modulating material is arranged over the at least one RF electrode. Also, an electro-optical device is provided.