Abstract: A first transmit path, a second transmit path, and a third transmit path are disclosed. The first transmit path includes a first radio frequency (RF) power amplifier (PA) and alpha switching circuitry, which is coupled to an output from the first RF PA. The second transmit path includes a second RF PA and beta switching circuitry, which is coupled to an output from the second RF PA. The third transmit path includes a third RF PA.

Abstract: Pilot switch circuitry grounds a hot node (an injection node) of a microelectromechanical system (MEMS) switch to reduce or eliminate arcing between a cantilever contact and a terminal contact when the MEMS switch is opened or closed. The pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS come into contact with one another (when the MEMS switch is closed). Additionally, the pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS disengage from one another (when the MEMS switch is opened).

Abstract: A tunable radio frequency (RF) duplexer is disclosed. The tunable RF duplexer includes a first hybrid coupler, a second hybrid coupler, and an RF filter circuit. The first hybrid coupler is operable to split an RF receive input signal into first and second RF quadrature hybrid receive signals (QHRSs). The first hybrid coupler is also operable to split an RF transmission input signal into first and second RF quadrature hybrid transmission signals (QHTSs). The RF filter circuit is operable to pass the first and second RF QHRSs to the second hybrid coupler and to reflect the first and second RF QHTSs back to the first hybrid coupler. Additionally, the second hybrid coupler is configured to combine the first and second RF QHRSs into an RF receive output signal, while the first hybrid coupler is configured to combine the first and second RF QHTSs into an RF transmission output signal.

Abstract: This disclosure includes embodiments of a radio frequency (RF) transceiver having a distributed duplex filtering topology. The RF transceiver includes a power amplifier and a tunable RF duplexer. The tunable RF duplexer is configured to input an RF transmission input signal from the power amplifier, generate an RF transmission output signal that operates within an RF transmission band in response to the RF transmission input signal from the power amplifier, and simultaneously output the RF transmission output signal to an antenna and input an RF receive input signal that operates within an RF receive band from the antenna. The power amplifier includes a plurality of RF amplifier stages coupled in cascode and an RF filter coupled between a first one of the RF amplifier stages and a second one of the RF amplifier stages. Accordingly, the RF filter is configured to provide tuning within the RF receive band.

Abstract: This disclosure includes embodiments of a tunable hybrid coupler. The tunable hybrid coupler includes a first inductive element having a first inductance, a second inductive element having a second inductance and mutually coupled to the first inductive element, a first variable capacitive element having a first variable capacitance, and a second variable capacitance having a second variable capacitance. The first variable capacitive element is coupled between a first port and a second port. The second variable capacitive element is coupled between a third port and a fourth port. The first inductive element is coupled from the first port to the third port, while the second inductive element is coupled from the second port to the fourth port. Accordingly, the tunable hybrid coupler may form an impedance matching network that is tunable to different RF communication bands. The tunable hybrid coupler may thus be included in a tunable RF duplexer.

Abstract: A radio frequency (RF) communications system, which includes an RF power amplifier (PA) and an envelope tracking power supply, is disclosed. The RF communications system processes RF signals associated with at least a first RF communications band, which has a first bandwidth. The RF PA receives and amplifies an RF input signal to provide an RF transmit signal using an envelope power supply signal. The envelope tracking power supply provides the envelope power supply signal, which has switching ripple based on a programmable switching frequency. The programmable switching frequency is selected to be greater that the first bandwidth.

Abstract: Analog-to-digital pulse width modulation circuitry includes thermometer code generator circuitry, clock generator circuitry, delay selection circuitry, and an output stage. The thermometer code generator circuitry is adapted to generate a digital thermometer code based upon a received analog input voltage. The clock generator circuitry is adapted to generate a reference clock and a plurality of delayed clock signals. The delay selection circuitry is connected between the thermometer code generator circuitry and the clock generator circuitry, and is adapted to select one of the delayed clock signals to present to the output stage based upon the generated thermometer code. The selected delayed clock signal is delayed by an amount of time that is proportional to the generated thermometer code. The reference clock signal and the selected delayed clock signal are delivered to the output stage where they are used to generate a pulse width modulated output signal.

Abstract: Embodiments of circuitry, which includes power supply switching circuitry and a first inductive element, are disclosed. The power supply switching circuitry has a first switching output and a second switching output. The first inductive element is coupled between the first switching output and a power supply output. The power supply switching circuitry operates in one of a first operating mode and a second operating mode. During the first operating mode, the first switching output is voltage compatible with the second switching output. During the second operating mode, the first switching output is allowed to be voltage incompatible with the second switching output.

Abstract: Circuitry, which includes a linear amplifier and a linear amplifier power supply, is disclosed. The linear amplifier at least partially provides an envelope power supply signal to a radio frequency (RF) power amplifier (PA) using a selected one of a group of linear amplifier supply voltages. The linear amplifier power supply provides at least one of the group of linear amplifier supply voltages. Selection of the selected one of the group of linear amplifier supply voltages is based on a desired voltage of the envelope power supply signal.

Abstract: The present disclosure relates to a split-band duplexer architecture that takes advantage of a relationship between a frequency division duplex (FDD) transmit band, an FDD receive band, and a time division duplex (TDD) band, which has frequencies located between FDD transmit band frequencies and FDD receive band frequencies. As such, by splitting the FDD receive and transmit bands into two sub-bands, two separate sub-band duplexers may be used to fully support the FDD receive and transmit bands. Further, a passband of one of the sub-band duplexers may be widened to support the TDD band while transmitting, and a passband of the other of the sub-band duplexers may be widened to support the TDD band while receiving. By using sub-band duplexers, isolation margins and insertion loss margins may be increased, which may allow use of standard filter components, such as surface acoustic wave (SAW) filters.

Abstract: In one embodiment, a balanced to unbalanced transformer utilizes a crossover configuration such that some portion of the secondary coil (inductor) is shared between two resonators (capacitors). Adding a first capacitor in parallel with a portion of the secondary inductor creates a first harmonic trap (filter), and also efficiently uses the secondary coil (inductor) as a resonating element. Adding a second capacitor which shares (crossover configuration) a portion of the secondary inductor with the first capacitor creates a second harmonic trap (filter), which may be tuned to the same harmonic as the first harmonic trap, or may be tuned to a different harmonic.

Abstract: This disclosure relates generally to radio frequency (RF) switching converters and RF amplification devices that use RF switching converters. In one embodiment, an RF switching converter includes a switching circuit operable to receive a power source voltage, a switching controller configured to switch the switching circuit so that the switching circuit generates a pulsed output voltage from the power source voltage, and an RF filter configured to convert the pulsed output voltage into a supply voltage, wherein the RF filter includes a decoupling capacitor configured to receive the supply voltage. The switching controller is configured to generate a ripple correction current that is injected into the decoupling capacitor such that the decoupling capacitor filters the ripple correction current. The decoupling capacitor outputs the ripple correction current such that the ripple correction current reduces a ripple variation in a supply current level of a supply current resulting from the supply voltage.

Abstract: Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

Abstract: This application reduces the power of series combined transformers and of parallel combined transformers while maintaining efficiency. In one embodiment, a series combined transformer is provided with a switch between a first primary inductor and a second primary inductor, in order to provide at least two modes. In a high power mode, the switch is open and the series combined transformer operates normally. In a low power mode, the switch is closed, one amplifier from a first differential amplifier pair is shut down, one amplifier from a second differential pair is shut down, and the series combined transformer operates efficiently in a low power mode.

Abstract: Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.