Abstract: A process for fabricating an organic x-ray detector is presented. The process includes forming a layered structure that includes disposing a first electrode layer on a thin film transistor array, disposing an organic photoactive layer on the first electrode layer and disposing a second electrode layer on the organic photoactive layer. The organic photoactive layer includes a fullerene or a fullerene derivative having a carbon cluster of at least 70 carbon atoms. The process further includes disposing a scintillator layer on the layered structure at a temperature greater than 50 degrees Celsius. An organic x-ray detector fabricated by the process is further presented. An x-ray system including the organic x-ray detector is also presented.

Abstract: An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the barrier layer, such that the barrier layer includes at least one inorganic material.

Abstract: An organic charge integrating device is presented. The organic charge integrating device includes a thin film transistor (TFT) array, a first electrode layer disposed on the TFT array, an organic photoactive layer disposed on the first electrode layer, and a second electrode layer disposed on the organic photoactive layer. The organic photoactive layer has a thickness in a range from about 700 nanometers to about 3 microns. An organic x-ray detector is presented. An imaging system including the organic x-ray detector is also presented.

Abstract: A process for fabricating an organic x-ray detector is presented. The process includes forming a layered structure that includes disposing a first electrode layer on a thin film transistor array, disposing an organic photoactive layer on the first electrode layer and disposing a second electrode layer on the organic photoactive layer. The organic photoactive layer includes a fullerene or a fullerene derivative having a carbon cluster of at least 70 carbon atoms. The process further includes disposing a scintillator layer on the layered structure at a temperature greater than 50 degrees Celsius. An organic x-ray detector fabricated by the process is further presented. An x-ray system including the organic x-ray detector is also presented.

Abstract: A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

Abstract: Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

Abstract: An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the barrier layer, such that the barrier layer includes at least one inorganic material.

Abstract: Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

Abstract: A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

Abstract: Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

Abstract: Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

Abstract: A device including a layer comprising a light emissive area and a light non-emissive area. A light-extracting feature is disposed over the light non-emissive area. The light-extracting features can include surface aberrations and reflective index matching elements. A method of forming the device is also provided.

Abstract: A device including a layer comprising a light emissive area and a light non-emissive area. A light-extracting feature is disposed over the light non-emissive area. The light-extracting features can include surface aberrations and reflective index matching elements. A method of forming the device is also provided.