Abstract: A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1??1)+i?1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1??2)+i?2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation ?1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ?1 of the first layer material and the deviation ?2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ?2 of the second layer material.

Abstract: A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (12, 32, 42, 52), a reflection layer system (14, 34, 44, 54) and at least one deformation reduction layer (15, 35, 45, 55, 58). When the optically effective surface (11, 31, 41, 51) is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.

Abstract: A mirror for a microlithographic projection exposure apparatus and a method for processing a mirror. The mirror includes an optically effective surface, a mirror substrate and a multiple layer system configured to reflect electromagnetic radiation with an operational wavelength of the projection exposure apparatus which is incident on the optically effective surface. The multiple layer system has a plurality of reflection layer stacks (16a, 16b, 16c, 26a, 26b), between each of which a respective separation layer (15a, 15b, 15c, 25a, 25b) is arranged. This separation layer is produced from a material which has a melting temperature that is at least 80° C. but less than 300° C.

Abstract: An optical assembly, in particular for a lithography system for imaging lithographic micro- or nanostructures, includes at least two optical elements arranged successively in a beam path of the optical assembly, an acquisition device designed to acquire radiation signals from marking elements on or at the at least two optical elements, and a control device coupled to the acquisition device and which is designed to determine the plurality of properties of the optically active surface of the at least two optical elements as a function of the information contained in the radiation signals originating from the marking elements. The disclosure also relates to a method for operating the optical assembly.

Abstract: A projection objective of a microlithographic projection apparatus comprises a wavefront correction device (42) comprising a mirror substrate (44; 44a, 44b) that has two opposite optical surfaces (46, 48), through which projection light passes, and a circumferential rim surface (50) extending between the two optical surfaces (46, 48). A first and a second optical system (OS1, OS2) are configured to direct first and second heating light (HL1, HL2) to different portions of the rim surface (50) such that at least a portion of the first and second heating light enters the mirror substrate (44; 44a, 44b). A temperature distribution caused by a partial absorption of the heating light (HL1, HL2) results in a refractive index distribution inside the mirror substrate (44; 44a, 44b) that corrects a wavefront error.

Abstract: An illumination and displacement device for a projection exposure apparatus comprises an illumination optical unit for illuminating an illumination field. An object holder serves for mounting an object in such a way that at least one part of the object can be arranged in the illumination field. An object holder drive serves for displacing the object during illumination in an object displacement direction. A correction device serves for the spatially resolved influencing of an intensity of the illumination at least of sections of the illumination field, wherein there is a spatial resolution of the influencing of the intensity of the illumination of the illumination field at least along the object displacement direction. This results in an illumination and displacement device in which field-dependent imaging aberrations which are present during the projection exposure do not undesirably affect a projection result.

Abstract: A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Abstract: Aberrations of a projection lens for microlithography can be subdivided into two classes: a first class of aberrations, which are distinguished by virtue of the fact that their future size increases by a non-negligible value after a constant time duration, independently of their current size, and a second class of aberrations, which, after reaching a threshold, only increase by a negligible value after each further time duration. An adjustment method is proposed, which adjusts these two classes of aberrations in parallel in time with one another.

Abstract: A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (12, 32, 42, 52), a reflection layer system (14, 34, 44, 54) and at least one deformation reduction layer (15, 35, 45, 55, 58). When the optically effective surface (11, 31, 41, 51) is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.

Abstract: A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1??1)+i?1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1??2)+i?2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation ?1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ?1 of the first layer material and the deviation ?2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ?2 of the second layer material.

Abstract: An illumination and displacement device for a projection exposure apparatus comprises an illumination optical unit for illuminating an illumination field. An object holder serves for mounting an object in such a way that at least one part of the object can be arranged in the illumination field. An object holder drive serves for displacing the object during illumination in an object displacement direction. A correction device serves for the spatially resolved influencing of an intensity of the illumination at least of sections of the illumination field, wherein there is a spatial resolution of the influencing of the intensity of the illumination of the illumination field at least along the object displacement direction. This results in an illumination and displacement device in which field-dependent imaging aberrations which are present during the projection exposure do not undesirably affect a projection result.

Abstract: A projection objective of a microlithographic projection exposure apparatus comprises a wavefront correction device comprising a refractive optical element that has two opposite optical surfaces, through which projection light passes, and a circumferential rim surface extending between the two optical surfaces. A first and a second optical system are configured to direct first and second heating light to different portions of the rim surface such that at least a portion of the first and second heating light enters the refractive optical element. A temperature distribution caused by a partial absorption of the heating light results in a refractive index distribution inside the refractive optical element that corrects a wavefront error. At least the first optical system comprises a focusing optical element that focuses the first heating light in a focal area such that the first heating light emerging from the focal area impinges on the rim surface.