Abstract: Magnetoelectronic components comprise at least one oblong working structure made of a ferromagnetic material, along which magnetic domain walls can migrate, means for applying an electric current to this working structure, and at least one magnetic field sensor for the magnetic field generated by the working structure. The working structure is designed so that it is able to form domain walls, the transverse magnetization direction of which in the center has no preferred direction in the plane perpendicular to the migration direction thereof along the working structure, and/or can form massless domain walls. It was found that the kinetic energy of such moving domain walls vanishes. These walls are thus not subject to the Walker limit nor to intrinsic pinning. As a result, the components can read, store or process and finally output information more quickly. The invention also relates to a method for measuring the non-adiabatic spin transfer parameter ? of a ferromagnetic material.

Abstract: Magnetoelectronic components comprise at least one oblong working structure made of a ferromagnetic material, along which magnetic domain walls can migrate, means for applying an electric current to this working structure, and at least one magnetic field sensor for the magnetic field generated by the working structure. The working structure is designed so that it is able to form domain walls, the transverse magnetization direction of which in the center has no preferred direction in the plane perpendicular to the migration direction thereof along the working structure, and/or can form massless domain walls. It was found that the kinetic energy of such moving domain walls vanishes. These walls are thus not subject to the Walker limit nor to intrinsic pinning. As a result, the components can read, store or process and finally output information more quickly. The invention also relates to a method for measuring the non-adiabatic spin transfer parameter ? of a ferromagnetic material.