Patents by Inventor Riccardo Mottadelli

Riccardo Mottadelli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cross-point memory and methods for fabrication of same
    Patent number: 11600665
    Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: March 7, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
  • CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
    Publication number: 20210091140
    Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.
    Type: Application
    Filed: October 13, 2020
    Publication date: March 25, 2021
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
  • Cross-point memory and methods for fabrication of same
    Patent number: 10854674
    Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: December 1, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
  • CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
    Publication number: 20170365642
    Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.
    Type: Application
    Filed: August 31, 2017
    Publication date: December 21, 2017
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
  • Cross-point memory and methods for fabrication of same
    Patent number: 9806129
    Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: October 31, 2017
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli
  • CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
    Publication number: 20150243708
    Abstract: The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material.
    Type: Application
    Filed: February 25, 2014
    Publication date: August 27, 2015
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Marcello Ravasio, Samuele Sciarrillo, Fabio Pellizzer, Innocenzo Tortorelli, Roberto Somaschini, Cristina Casellato, Riccardo Mottadelli