Patents by Inventor Riccardo Riva Reggiori

Riccardo Riva Reggiori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6828834
    Abstract: A power-on management system for an on-chip voltage down-converter, monitoring both external and internal voltage supplies to independently determine when both supplies have reached minimum levels for proper operation of on-chip circuitry. The power-on management system supplies output signals that: control the discharge of the internal supply nodes at the initiation of power-on; force the active mode of the voltage down-converter; and deactivate a fast local voltage reference on completion of power-on.
    Type: Grant
    Filed: December 24, 2002
    Date of Patent: December 7, 2004
    Assignee: Atmel Corporation
    Inventors: Stefano Sivero, Riccardo Riva-Reggiori, Lorenzo Bedarida
  • Patent number: 6785183
    Abstract: A voltage down-converter system, with a stand-by mode and an active mode, for a memory device with the following components. A charge node is configured to receive a charge. A first transistor has a first gate and the first transistor is configured to supply a load current to the memory device. A first switch is coupled to the charge node and the first gate, the first switch being configured to apply the charge in the charge node to the first gate during transition from stand-by to active modes. A second transistor is coupled to the first gate and configured to bias the first transistor to an inactive state during stand-by mode. A second switch is coupled to the first gate and the second transistor, the second switch being configured to apply a voltage difference at the second transistor to the first gate during the stand-by mode.
    Type: Grant
    Filed: April 3, 2003
    Date of Patent: August 31, 2004
    Assignee: Atmel Corporation
    Inventors: Stefano Sivero, Riccardo Riva Reggiori, Fabio Tassan Caser
  • Publication number: 20040052145
    Abstract: A voltage down-converter system, with a stand-by mode and an active mode, for a memory device with the following components. A charge node is configured to receive a charge. A first transistor has a first gate and the first transistor is configured to supply a load current to the memory device. A first switch is coupled to the charge node and the first gate, the first switch being configured to apply the charge in the charge node to the first gate during transition from stand-by to active modes. A second transistor is coupled to the first gate and configured to bias the first transistor to an inactive state during stand-by mode. A second switch is coupled to the first gate and the second transistor, the second switch being configured to apply a voltage difference at the second transistor to the first gate during the stand-by mode.
    Type: Application
    Filed: April 3, 2003
    Publication date: March 18, 2004
    Applicant: Atmel Corporation
    Inventors: Stefano Sivero, Riccardo Riva Reggiori, Fabio Tassan Caser
  • Publication number: 20040046538
    Abstract: A power-on management system for an on-chip voltage down-converter, monitoring both external and internal voltage supplies to independently determine when both supplies have reached minimum levels for proper operation of on-chip circuitry. The power-on management system supplies output signals that: control the discharge of the internal supply nodes at the initiation of power-on; force the active mode of the voltage down-converter; and deactivate a fast local voltage reference on completion of power-on.
    Type: Application
    Filed: December 24, 2002
    Publication date: March 11, 2004
    Inventors: Stefano Sivero, Riccardo Riva-Reggiori, Lorenzo Bedarida
  • Publication number: 20020136069
    Abstract: A method and a device are provided for reducing the average access time of a non-volatile memory during the reading phase. Reading is effected in either a page mode or a burst mode from a matrix array of memory cells to which recognition logic for recognizing access addresses to the memory is coupled. According to the method, there is provided a buffer memory that is coupled to the matrix array, and a predetermined number of memory words are stored in the buffer memory subsequent to a last-effected reading of the matrix array.
    Type: Application
    Filed: December 28, 2001
    Publication date: September 26, 2002
    Applicant: STMICROELECTRONICS S.r.l.
    Inventors: Riccardo Riva Reggiori, Stefan Schippers, Mauro Sali