Patents by Inventor Rich Wise

Rich Wise has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220197147
    Abstract: A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N layers on the substrate. N is an integer greater than one. The N layers include N mean free paths for secondary electrons, respectively. The method includes depositing a photoresist layer on the multi-layer stack, wherein the N mean free paths converge in the photoresist layer. Another method for patterning a substrate includes providing a substrate and depositing a layer on the substrate. The layer includes varying mean free paths for secondary electrons. The method includes depositing a photoresist layer on the layer. The varying mean free paths for secondary electrons converge in the photoresist layer.
    Type: Application
    Filed: May 15, 2020
    Publication date: June 23, 2022
    Inventors: Andrew LIANG, Nader SHAMMA, Rich WISE, Akhil SINGHAL, Arpan Pravin MAHOROWALA, Gregory BLACHUT, Dustin Zachary AUSTIN
  • Patent number: 10885253
    Abstract: A virtual fabrication environment for semiconductor device fabrication that determines a lowest lithography exposure dose range in which one or more defects are still reparable by deposition and etch operations is discussed. Further techniques for repairing line edge roughness caused by lithography are described.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: January 5, 2021
    Assignee: Coventor, Inc.
    Inventors: Daniel Sobieski, Rich Wise, Yang Pan, David M. Fried, Jiangjiang Gu
  • Publication number: 20200134117
    Abstract: A virtual fabrication environment for semiconductor device fabrication that determines a lowest lithography exposure dose range in which one or more defects are still reparable by deposition and etch operations is discussed. Further techniques for repairing line edge roughness caused by lithography are described.
    Type: Application
    Filed: October 24, 2019
    Publication date: April 30, 2020
    Inventors: Daniel Sobieski, Rich Wise, Yang Pan, David M. Fried, Jiangjiang Gu
  • Patent number: 8048325
    Abstract: A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
    Type: Grant
    Filed: January 7, 2008
    Date of Patent: November 1, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Vaidyanathan Balasubramaniam, Koichiro Inazawa, Rie Inazawa, Rich Wise, Arpan Mahorawala, Siddhartha Panda
  • Publication number: 20080128388
    Abstract: A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
    Type: Application
    Filed: January 7, 2008
    Publication date: June 5, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Vaidyanathan BALASUBRAMANIAM, Koichiro INAZAWA, Rie INAZAWA, Rich WISE, Arpan P. MAHOROWALA, Siddhartha PANDA
  • Patent number: 7344991
    Abstract: A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
    Type: Grant
    Filed: August 14, 2003
    Date of Patent: March 18, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Vaidyanathan Balasubramaniam, Koichiro Inazawa, Rich Wise, Arpan Mahorowala, Siddhartha Panda
  • Publication number: 20070056927
    Abstract: A process and system for anisoptropically dry etching through a doped silicon layer is described. The process chemistry comprises a nitrogen containing gas and a fluorocarbon gas. For example, the process chemistry comprises CF4, C4F8 and N2.
    Type: Application
    Filed: September 14, 2005
    Publication date: March 15, 2007
    Inventors: Len Tsou, Rajiv Ranade, George Kaplita, Hongwen Yan, Rich Wise, Akiteru Ko
  • Publication number: 20050136666
    Abstract: A method and system for etching an organic layer on a substrate in a plasma processing system comprising: introducing a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble gas (i.e., He, Ne, Ar, Kr, Xe, Rn). The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an organic layer on the thin film; forming a photoresist pattern on the organic layer; and transferring the photoresist pattern to the organic layer with an etch process using a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity.
    Type: Application
    Filed: February 27, 2004
    Publication date: June 23, 2005
    Applicants: Tokyo Electron Limited, International Business Machines Corporation
    Inventors: Vaidyanathan Balasubramaniam, Koichiro Inazawa, Siddhartha Panda, Rich Wise, Arpan Mahorowala
  • Publication number: 20040180269
    Abstract: A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
    Type: Application
    Filed: August 14, 2003
    Publication date: September 16, 2004
    Applicants: Tokyo Electron Limited, International Business Machines Corporation
    Inventors: Vaidyanathan Balasubramaniam, Koichiro Inazawa, Rich Wise, Arpan P. Mahorowala, Siddhartha Panda