Patents by Inventor Richard A. Fellner

Richard A. Fellner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial silicon starting material
    Patent number: 5561316
    Abstract: A silicon starting material for fabricating integrated circuits is desrcibed that comprises a silicon wafer substrate material and a first epitaxial layer grown on the wafer substrate material which eliminates stacking faults in the subsequent fabrication of a semiconductor device.
    Type: Grant
    Filed: February 14, 1995
    Date of Patent: October 1, 1996
    Assignee: Hewlett-Packard Co.
    Inventor: Richard A. Fellner
  • Epitaxial silicon starting material
    Patent number: 5296047
    Abstract: A silicon starting material for fabricating integrated circuits is desrcibed that comprises a silicon wafer substrate material and a first epitaxial layer grown on the wafer substrate which eliminates stacking faults in the subsequent fabrication of a semiconductor device.
    Type: Grant
    Filed: December 1, 1992
    Date of Patent: March 22, 1994
    Assignee: Hewlett-Packard Co.
    Inventor: Richard A. Fellner