Patents by Inventor Richard A. Hogle

Richard A. Hogle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250049384
    Abstract: An ultrasound bone densitometer employs transmitted ultrasound and laser stimulated ultrasound to provide a more complete measure of bone health. Sources of error including secondary laser stimulation, signal dependency on direction of laser light travel, registration, and signal chain noise are addressed in the construction of the densitometer.
    Type: Application
    Filed: August 8, 2023
    Publication date: February 13, 2025
    Inventors: Richard Franklin Morris, Xueding Wang, Richard A. Hogle, Duane A. Kaufman, Ken Kozloff
  • Publication number: 20110017140
    Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.
    Type: Application
    Filed: February 11, 2010
    Publication date: January 27, 2011
    Inventors: Christopher Mark Bailey, Michael Andrew Galtry, David Engerran, Andrew James Seeley, Geoffrey Young, Michael Alan Eric Wilders, Kenneth Allen Aitchison, Richard A. Hogle
  • Patent number: 7638106
    Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.
    Type: Grant
    Filed: April 21, 2006
    Date of Patent: December 29, 2009
    Assignee: Edwards Limited
    Inventors: Christopher Mark Bailey, Michael Andrew Galtry, David Engerran, Andrew James Seeley, Geoffrey Young, Michael Alan Eric Wilders, Kenneth Allen Aitchison, Richard A. Hogle
  • Patent number: 6955707
    Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: October 18, 2005
    Assignee: The BOC Group, Inc.
    Inventors: Edward Frederick Ezell, Richard A. Hogle, Walter H. Whitlock, Graham A. McFarlane
  • Patent number: 6936537
    Abstract: The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: August 30, 2005
    Assignee: The BOC Group, Inc.
    Inventors: Richard A. Hogle, Patrick Joseph Helly, Ce Ma, Laura Joy Miller
  • Patent number: 6818566
    Abstract: A method and system for thermally activating a oxidizing cleaning gas for use in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the oxidizing cleaning gas with heated inert gas. The resulting thermally activated oxidizing cleaning gas does not readily deactivate, thus providing enhanced cleaning capabilities.
    Type: Grant
    Filed: October 18, 2002
    Date of Patent: November 16, 2004
    Assignee: The BOC Group, Inc.
    Inventors: Noel James Leeson, Graham Hodgson, Peter Harold Buckley, Richard A. Hogle
  • Publication number: 20040077162
    Abstract: A method and system for thermally activating a oxidizing cleaning gas for use in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the oxidizing cleaning gas with heated inert gas. The resulting thermally activated oxidizing cleaning gas does not readily deactivate, thus providing enhanced cleaning capabilities.
    Type: Application
    Filed: October 18, 2002
    Publication date: April 22, 2004
    Inventors: Noel James Leeson, Graham Hodgson, Peter Harold Buckley, Richard A. Hogle
  • Publication number: 20040074516
    Abstract: The present invention is directed to a process and system for the versatile operation of process equipment, and especially semiconductor process chamber clean equipment, from any pressure level ranging from a vacuum to just less than one atmosphere absolute. The system of the present invention provides a storage vessel capable of storing gas at sub-atmospheric pressure and a vacuum pump. By using a vacuum pump, the vessel stores a reasonable quantity of gas without being pressurized above atmospheric pressure. Therefore, the entire capacity of the vessel can be supplied to the process because the vacuum pump pulls the contents from the vessel down to about 1 torr. In addition, the gas can be provided at a constant supply pressure, while providing a safe gas storage vessel, since the supply gas is never stored at a pressure above one atmosphere absolute.
    Type: Application
    Filed: October 18, 2002
    Publication date: April 22, 2004
    Inventors: Richard A. Hogle, Graham A. McFarlane, Graham Hodgson, Peter Harold Buckley
  • Publication number: 20030228989
    Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.
    Type: Application
    Filed: June 10, 2002
    Publication date: December 11, 2003
    Inventors: Edward Frederick Ezell, Richard A. Hogle, Walter H. Whitlock, Graham A. McFarlane
  • Publication number: 20020192980
    Abstract: The use of a polyhedral oligometric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligometric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.
    Type: Application
    Filed: April 12, 2002
    Publication date: December 19, 2002
    Inventors: Richard A. Hogle, Patrick Joseph Helly, Ce Ma, Laura Joy Miller
  • Patent number: 6361020
    Abstract: A valve for use with an ultra high purity gas comprising a valve body defining a valve chamber having a valve outlet through which gas is discharged and containing a reciprocable sealing member, characterized in that the valve chamber is in fluid communication with a source of the gas and in that the sealing member is reciprocable along an axis substantially parallel to the direction of flow of gas discharged from the valve outlet and into and out of sealing contact with a sealing face located within the valve chamber and circumscribing the inlet end of a valve outlet pipe, the opposite, outlet end of which pipe forms the valve outlet. The valve has a low wetted area and is thus easy to purge, and the valve design both reduces wear and restricts it to a single component which is easily replaced when necessary.
    Type: Grant
    Filed: January 12, 2000
    Date of Patent: March 26, 2002
    Assignee: The BOC Group plc
    Inventors: David William Birch, Peter Harold Buckley, Kenneth William Cross, Richard A. Hogle, Kazuya Inoue, Jack B. Wert
  • Patent number: 5579241
    Abstract: Time sampled data from many hundreds of sensors spatially arranged on a subject is acquired, displayed and archived in real-time. A redundant array of acquisition processors coupled to temporary storage device are controlled by a system control processor. As the data is acquired, an operator interacts with a display processor to select sensors mapped on a computer model of the subject. The selected sensors are displayed as real-time `postage stamp` traces each located in a position reflecting their position on the subject. During acquisition in the background, or at some time later, the acquired data is archived onto a slower, but much larger data storage device such as a stream tape, or optical disk.
    Type: Grant
    Filed: June 29, 1994
    Date of Patent: November 26, 1996
    Assignee: General Electric Company
    Inventors: Nelson R. Corby, Jr., Richard A. Hogle
  • Patent number: 5059761
    Abstract: Laser drilling and real-time sensing and control of hole depth by the provision of magnetic field jack-up coils located around or to the side of a laser beam, in a stream of ionized plasma, and the coils are connected to a depth detector and comparator to halt laser drilling at a desired depth.
    Type: Grant
    Filed: December 21, 1990
    Date of Patent: October 22, 1991
    Assignee: General Electric Company
    Inventors: Rudolph A. A. Koegl, Richard A. Hogle, Susan D. Bauer
  • Patent number: 5013886
    Abstract: Detection of the breakthrough of a laser beam through a workpiece wall uses one or more magnetic field pick-up coils. The coils are disposed on the drill side (side upon which the laser beam is impinging) of the workpiece. The coils sense the magnetic fields generated in the ionized plasma of particles escaping from the impact of the laser on the surface. The coils are connected to a breakthrough detector which generates a breakthrough signal upon the plasma and associated magnetic fields disappearing at breakthrough. The breakthrough signal is used to turn off the laser and/or change the application point at which the laser beam strikes the workpiece.
    Type: Grant
    Filed: July 23, 1990
    Date of Patent: May 7, 1991
    Assignee: General Electric Company
    Inventors: Rudolph A. A. Koegl, Richard A. Hogle
  • Patent number: 4444811
    Abstract: A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed.Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product.An apparatus for carrying out this process is also disclosed.
    Type: Grant
    Filed: December 3, 1981
    Date of Patent: April 24, 1984
    Assignee: California Institute of Technology
    Inventors: George Hsu, Harry Levin, Richard A. Hogle, Ananda Praturi, Ralph Lutwack
  • Patent number: 4314525
    Abstract: A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed.Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product.An apparatus for carrying out this process is also disclosed.
    Type: Grant
    Filed: March 3, 1980
    Date of Patent: February 9, 1982
    Assignee: California Institute of Technology
    Inventors: George C. Hsu, Harry Levin, Richard A. Hogle, Ananda Praturi, Ralph Lutwack