Patents by Inventor Richard A. Hogle
Richard A. Hogle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250049384Abstract: An ultrasound bone densitometer employs transmitted ultrasound and laser stimulated ultrasound to provide a more complete measure of bone health. Sources of error including secondary laser stimulation, signal dependency on direction of laser light travel, registration, and signal chain noise are addressed in the construction of the densitometer.Type: ApplicationFiled: August 8, 2023Publication date: February 13, 2025Inventors: Richard Franklin Morris, Xueding Wang, Richard A. Hogle, Duane A. Kaufman, Ken Kozloff
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Publication number: 20110017140Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.Type: ApplicationFiled: February 11, 2010Publication date: January 27, 2011Inventors: Christopher Mark Bailey, Michael Andrew Galtry, David Engerran, Andrew James Seeley, Geoffrey Young, Michael Alan Eric Wilders, Kenneth Allen Aitchison, Richard A. Hogle
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Patent number: 7638106Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.Type: GrantFiled: April 21, 2006Date of Patent: December 29, 2009Assignee: Edwards LimitedInventors: Christopher Mark Bailey, Michael Andrew Galtry, David Engerran, Andrew James Seeley, Geoffrey Young, Michael Alan Eric Wilders, Kenneth Allen Aitchison, Richard A. Hogle
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Patent number: 6955707Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.Type: GrantFiled: June 10, 2002Date of Patent: October 18, 2005Assignee: The BOC Group, Inc.Inventors: Edward Frederick Ezell, Richard A. Hogle, Walter H. Whitlock, Graham A. McFarlane
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Patent number: 6936537Abstract: The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.Type: GrantFiled: April 12, 2002Date of Patent: August 30, 2005Assignee: The BOC Group, Inc.Inventors: Richard A. Hogle, Patrick Joseph Helly, Ce Ma, Laura Joy Miller
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Patent number: 6818566Abstract: A method and system for thermally activating a oxidizing cleaning gas for use in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the oxidizing cleaning gas with heated inert gas. The resulting thermally activated oxidizing cleaning gas does not readily deactivate, thus providing enhanced cleaning capabilities.Type: GrantFiled: October 18, 2002Date of Patent: November 16, 2004Assignee: The BOC Group, Inc.Inventors: Noel James Leeson, Graham Hodgson, Peter Harold Buckley, Richard A. Hogle
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Publication number: 20040077162Abstract: A method and system for thermally activating a oxidizing cleaning gas for use in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the oxidizing cleaning gas with heated inert gas. The resulting thermally activated oxidizing cleaning gas does not readily deactivate, thus providing enhanced cleaning capabilities.Type: ApplicationFiled: October 18, 2002Publication date: April 22, 2004Inventors: Noel James Leeson, Graham Hodgson, Peter Harold Buckley, Richard A. Hogle
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Publication number: 20040074516Abstract: The present invention is directed to a process and system for the versatile operation of process equipment, and especially semiconductor process chamber clean equipment, from any pressure level ranging from a vacuum to just less than one atmosphere absolute. The system of the present invention provides a storage vessel capable of storing gas at sub-atmospheric pressure and a vacuum pump. By using a vacuum pump, the vessel stores a reasonable quantity of gas without being pressurized above atmospheric pressure. Therefore, the entire capacity of the vessel can be supplied to the process because the vacuum pump pulls the contents from the vessel down to about 1 torr. In addition, the gas can be provided at a constant supply pressure, while providing a safe gas storage vessel, since the supply gas is never stored at a pressure above one atmosphere absolute.Type: ApplicationFiled: October 18, 2002Publication date: April 22, 2004Inventors: Richard A. Hogle, Graham A. McFarlane, Graham Hodgson, Peter Harold Buckley
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Publication number: 20030228989Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.Type: ApplicationFiled: June 10, 2002Publication date: December 11, 2003Inventors: Edward Frederick Ezell, Richard A. Hogle, Walter H. Whitlock, Graham A. McFarlane
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Publication number: 20020192980Abstract: The use of a polyhedral oligometric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligometric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.Type: ApplicationFiled: April 12, 2002Publication date: December 19, 2002Inventors: Richard A. Hogle, Patrick Joseph Helly, Ce Ma, Laura Joy Miller
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Patent number: 6361020Abstract: A valve for use with an ultra high purity gas comprising a valve body defining a valve chamber having a valve outlet through which gas is discharged and containing a reciprocable sealing member, characterized in that the valve chamber is in fluid communication with a source of the gas and in that the sealing member is reciprocable along an axis substantially parallel to the direction of flow of gas discharged from the valve outlet and into and out of sealing contact with a sealing face located within the valve chamber and circumscribing the inlet end of a valve outlet pipe, the opposite, outlet end of which pipe forms the valve outlet. The valve has a low wetted area and is thus easy to purge, and the valve design both reduces wear and restricts it to a single component which is easily replaced when necessary.Type: GrantFiled: January 12, 2000Date of Patent: March 26, 2002Assignee: The BOC Group plcInventors: David William Birch, Peter Harold Buckley, Kenneth William Cross, Richard A. Hogle, Kazuya Inoue, Jack B. Wert
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Patent number: 5579241Abstract: Time sampled data from many hundreds of sensors spatially arranged on a subject is acquired, displayed and archived in real-time. A redundant array of acquisition processors coupled to temporary storage device are controlled by a system control processor. As the data is acquired, an operator interacts with a display processor to select sensors mapped on a computer model of the subject. The selected sensors are displayed as real-time `postage stamp` traces each located in a position reflecting their position on the subject. During acquisition in the background, or at some time later, the acquired data is archived onto a slower, but much larger data storage device such as a stream tape, or optical disk.Type: GrantFiled: June 29, 1994Date of Patent: November 26, 1996Assignee: General Electric CompanyInventors: Nelson R. Corby, Jr., Richard A. Hogle
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Patent number: 5059761Abstract: Laser drilling and real-time sensing and control of hole depth by the provision of magnetic field jack-up coils located around or to the side of a laser beam, in a stream of ionized plasma, and the coils are connected to a depth detector and comparator to halt laser drilling at a desired depth.Type: GrantFiled: December 21, 1990Date of Patent: October 22, 1991Assignee: General Electric CompanyInventors: Rudolph A. A. Koegl, Richard A. Hogle, Susan D. Bauer
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Patent number: 5013886Abstract: Detection of the breakthrough of a laser beam through a workpiece wall uses one or more magnetic field pick-up coils. The coils are disposed on the drill side (side upon which the laser beam is impinging) of the workpiece. The coils sense the magnetic fields generated in the ionized plasma of particles escaping from the impact of the laser on the surface. The coils are connected to a breakthrough detector which generates a breakthrough signal upon the plasma and associated magnetic fields disappearing at breakthrough. The breakthrough signal is used to turn off the laser and/or change the application point at which the laser beam strikes the workpiece.Type: GrantFiled: July 23, 1990Date of Patent: May 7, 1991Assignee: General Electric CompanyInventors: Rudolph A. A. Koegl, Richard A. Hogle
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Patent number: 4444811Abstract: A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed.Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product.An apparatus for carrying out this process is also disclosed.Type: GrantFiled: December 3, 1981Date of Patent: April 24, 1984Assignee: California Institute of TechnologyInventors: George Hsu, Harry Levin, Richard A. Hogle, Ananda Praturi, Ralph Lutwack
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Patent number: 4314525Abstract: A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed.Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product.An apparatus for carrying out this process is also disclosed.Type: GrantFiled: March 3, 1980Date of Patent: February 9, 1982Assignee: California Institute of TechnologyInventors: George C. Hsu, Harry Levin, Richard A. Hogle, Ananda Praturi, Ralph Lutwack