Abstract: The present disclosure describes a structure that includes an electromagnetic interference (EMI) immunity layer and a doped epitaxial layer on the EMI immunity layer. The EMI immunity layer has a first resistivity and a first thickness. The doped epitaxial layer has a second resistivity and a second thickness. A sum of thicknesses is defined by a combination of the first thickness and the second thickness. A first ratio is the sum of the first thicknesses to the second thickness. A second ratio is the second resistivity to the first resistivity. A product of the first ratio and the second ratio is equal to or less than about 1.

Abstract: Aspects relate to improved optically black reference pixels in a CMOS iSoc sensor. A system can include a pointer P1 that indicates pixels to be read out during a readout time interval, a pointer P2 that indicates pixels to be reset during the time interval, and a pointer P3 that preserves a validity of a frame. The system also includes a pointer P4 configured to mitigate an integration time of column fixed pattern noise (FPN) rows independently of the integration time of other rows. In some aspects, pointer P4 can mitigate blooming into sampled rows from surrounding rows. Pointer P4 can be continuously rotated, in an aspect. Further, in some aspects, pointer P4 can jump on a second cycle to arrive one line before pointer P1.

Abstract: Aspects relate to improved optically black reference pixels in a CMOS iSoc sensor. A system can include a pointer P1 that indicates pixels to be read out during a readout time interval, a pointer P2 that indicates pixels to be reset during the time interval, and a pointer P3 that preserves a validity of a frame. The system also includes a pointer P4 configured to mitigate an integration time of column fixed pattern noise (FPN) rows independently of the integration time of other rows. In some aspects, pointer P4 can mitigate blooming into sampled rows from surrounding rows. Pointer P4 can be continuously rotated, in an aspect. Further, in some aspects, pointer P4 can jump on a second cycle to arrive one line before pointer P1.

Abstract: There is provided a CMOS imager system for providing a viewable image having increased dynamic range including an image sensor including a number of sets of pixels. Each set of pixels is configured to receive one of a number of exposures and to generate image data corresponding to the received exposure in the interleaved mode. The image sensor is configured to operate in either an interleaved mode or a non-interleaved mode and to output the image data generated by each set of pixels as a frame of interleaved image data in the interleaved mode. The imager system further includes an interleaved image pipeline in communication with the image sensor, where the interleaved image pipeline is configured to receive the interleaved image data from the image sensor, combine the image data generated by each set of pixels corresponding to one of the exposures to form the viewable image.

Abstract: An exemplary image sensor comprises a photodetector proximate to a pixel site, and a light meter proximate to the pixel site configured to approximate an initial charge acquired by the photodetector at the end of a first integration period of a frame exposure period. A reset circuit resets the photodetector if the approximated initial charge acquired by the photodetector exceeds a threshold. A readout circuit detects a final charge acquired by the photodetector at the end of a second integration period of the frame exposure period. If the photodetector was reset, the readout circuit adjusts the final exposure to account for exposure prior to the photodetector having been reset.

Abstract: An exemplary image sensor comprises a photodetector proximate to a pixel site, and a light meter proximate to the pixel site configured to approximate an initial charge acquired by the photodetector at the end of a first integration period of a frame exposure period. A reset circuit resets the photodetector if the approximated initial charge acquired by the photodetector exceeds a threshold. A readout circuit detects a final charge acquired by the photodetector at the end of a second integration period of the frame exposure period. If the photodetector was reset, the readout circuit adjusts the final exposure to account for exposure prior to the photodetector having been reset.

Abstract: A bullet test tube (10) is taught having a media (22) for measuring a wound cavity (20), bullet penetration (52) and recovering a bullet (30) from a discharged firearm. The bullet test tube is made with an integral cylindrical tube (24) with both ends (26) open, cut to length from a cardboard tubular shipping container having a foil liner (28). The tube is filled with the media by casting at an elevated temperature preventing adherence to the sides of the tube and allowing the media to solidify internally without cracks or other deformities. A basic test tube (32) is utilized and a varied number of extenders (34) may be added according to the energy influence of bullet (30) under test. Covers (48) and (50) are provided to enclose the open ends of the various cylindrical tubes preventing contamination from debris during handling and shipping.

Abstract: An exemplary image sensor comprises a photodetector proximate to a pixel site, and a light meter proximate to the pixel site configured to approximate an initial charge acquired by the photodetector at the end of a first integration period of a frame exposure period. A reset circuit resets the photodetector if the approximated initial charge acquired by the photodetector exceeds a threshold. A readout circuit detects a final charge acquired by the photodetector at the end of a second integration period of the frame exposure period. If the photodetector was reset, the readout circuit adjusts the final exposure to account for exposure prior to the photodetector having been reset.

Abstract: There is provided a CMOS imager system for providing a viewable image having increased dynamic range including an image sensor including a number of sets of pixels. Each set of pixels is configured to receive one of a number of exposures and to generate image data corresponding to the received exposure in the interleaved mode. The image sensor is configured to operate in either an interleaved mode or a non-interleaved mode and to output the image data generated by each set of pixels as a frame of interleaved image data in the interleaved mode. The imager system further includes an interleaved image pipeline in communication with the image sensor, where the interleaved image pipeline is configured to receive the interleaved image data from the image sensor, combine the image data generated by each set of pixels corresponding to one of the exposures to form the viewable image.

Abstract: An exemplary image sensor comprises a photodetector proximate to a pixel site, and a light meter proximate to the pixel site configured to approximate an initial charge acquired by the photodetector at the end of a first integration period of a frame exposure period. A reset circuit resets the photodetector if the approximated initial charge acquired by the photodetector exceeds a threshold. A readout circuit detects a final charge acquired by the photodetector at the end of a second integration period of the frame exposure period. If the photodetector was reset, the readout circuit adjusts the final exposure to account for exposure prior to the photodetector having been reset.

Abstract: An improved semiconductor device that reduces reverse bias junction leakage in a photodiode by using a junction isolation region to isolate the photodiode from a trench isolation region. The improved semiconductor device improves image quality for different applications such as stand-alone digital cameras and digital cameras embedded in other imaging devices such as cellular phones and personal digital assistants.

Abstract: An improved semiconductor device that reduces reverse bias junction leakage in a photodiode by using a junction isolation region to isolate the photodiode from a trench isolation region. The improved semiconductor device improves image quality for different applications such as stand-alone digital cameras and digital cameras embedded in other imaging devices such as cellular phones and personal digital assistants.

Abstract: A sensor may be formed with a transistor comprising a gate that has both n-type and p-type regions to increase the gate work function. In combination with moving the p-type well such that the p-type well only partially dopes the channel of the transistor, the increased gate work function further increases the reset voltage level required to create the reset channel without having to use high doping levels in the critical regions of the sensor structure including the photo-detector and the reset transistor. The source of the reset transistor is partially beneath the n-type region of gate, while the transistor's drain is partially beneath the p-type region of the gate. The channel has a p-type well portion and a substrate portion. This construction of the sensor may eliminate the reset noise associated with the uncertainty of whether the charge left in the transistor's channel will flow back towards the photo-detector after the transistor has been turned off.

Abstract: An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark signal detector is shielded and separated from the active area to substantially reduce the radiation charges that reach the dark signal detector. In another implementation, the image sensor includes a radiation guard that is disposed between the active area and the shielded detector. When radiation or light is permitted to enter the active area, the guard when adequately biased attracts and collects radiated charges that may otherwise travel beyond the active area to reach the shielded detector and contaminate a measurement for the dark signal reference.

Abstract: An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from reaching a shielded dark signal detector. In one implementation, dark signal detector is shielded and separated from the active area to substantially reduce the radiation charges that reach the dark signal detector. In another implementation, the image sensor includes a radiation guard that is disposed between the active area and the shielded detector. When radiation or light is permitted to enter the active area, the guard when adequately biased attracts and collects radiated charges that may otherwise travel beyond the active area to reach the shielded detector and contaminate a measurement for the dark signal reference.

Abstract: A sensor may be formed with a transistor comprising a gate that has both n-type and p-type regions to increase the gate work function. In combination with moving the p-type well such that the p-type well only partially dopes the channel of the transistor, the increased gate work function further increases the reset voltage level required to create the reset channel without having to use high doping levels in the critical regions of the sensor structure including the photo-detector and the reset transistor. The source of the reset transistor is partially beneath the n-type region of gate, while the transistor's drain is partially beneath the p-type region of the gate. The channel has a p-type well portion and a substrate portion. This construction of the sensor may eliminate the reset noise associated with the uncertainty of whether the charge left in the transistor's channel will flow back towards the photo-detector after the transistor has been turned off.

Abstract: The present invention is directed to a solid state imaging device comprising a red pixel, a blue pixel, a first green pixel, a second green pixel, two analog-to-digital converters and a color interpolation circuit. The first analog-to-digital converter converts the output of the red pixel and output of the blue pixel into digital signals. The second analog-to-digital converter converts the output of the first green pixel and output of the second green pixel into digital signals. The color interpolation circuit combines the digital signals to determine the color of the pixel. The solid state imaging device may further comprise a third analog-to-digital converter, a fourth analog-to-digital converter, a programmable clock generator and a control. The third analog-to-digital converter converts the output of the blue pixel into a digital signal and the fourth analog-to-digital converter converts the output of the second green pixel into a digital signal.

Abstract: A CMOS imager includes a CMOS image sensor comprising an array of photoreceptors, a memory storing a reference operating level for the array, and readout circuitry for obtaining, at n-bit resolution, a photoreceptor reset value from the photoreceptors in the array. In addition, the CMOS imager includes comparison circuitry that determines a difference between the reference operating level and the photoreceptor reset value as well as matching circuitry that matches the difference against bins in a bin allocation. In particular, the bin allocation spans a photoreceptor noise range with the bins forming a quantization of the noise range into correction levels. Each of the correction levels may be associated with an m-bit correction code, where m is typically much less than n. As a result, the amount of memory necessary to store the correction codes is far less than that required to store full resolution (i.e., n-bit) values.

Abstract: A sensor may be formed with a transistor comprising a gate that has both n-type and p-type regions to increase the gate work function. In combination with moving the p-type well such that the p-type well only partially dopes the channel of the transistor, the increased gate work function further increases the reset voltage level required to create the reset channel without having to use high doping levels in the critical regions of the sensor structure including the photo-detector and the reset transistor. The source of the reset transistor is partially beneath the n-type region of gate, while the transistor's drain is partially beneath the p-type region of the gate. The channel has a p-type well portion and a substrate portion. This construction of the sensor may eliminate the reset noise associated with the uncertainty of whether the charge left in the transistor's channel will flow back towards the photo-detector after the transistor has been turned off.