Abstract: A method of controlling an oxygen-free heat treating process in an atmospheric pressure furnace is disclosed. The present method employs an oxygen-free gas atmosphere including hydrogen gas in concentrations between about 1.0 percent to 10.0 percent, a hydrocarbon gas, such as propylene, in concentrations of between about 0.1 percent and 10.0 percent that varies as a function of time, with the balance of the gas atmosphere being nitrogen. The presently disclosed oxygen-free carburization process uses a precisely controlled gas atmosphere to minimize inter-granular oxidation, eliminate the formation of soot and cementite, and avoid hydrogen embrittlement.

Abstract: A method of oxygen-free heat treatment of a steel part in an atmospheric pressure furnace is disclosed. The present method employs an oxygen-free controlled gas atmosphere including hydrogen gas in concentrations between about 1.0 percent to 10.0 percent, a hydrocarbon gas, such as propylene, in concentrations of between about 0.1 percent and 10.0 percent that varies as a function of time, with the balance of the gas atmosphere being nitrogen. The presently disclosed oxygen-free heat treatment process, preferably a carburization process, uses a precisely controlled atmosphere to minimize inter-granular oxidation, eliminate the formation of soot and cementite or other metallic carbides, and avoid hydrogen embrittlement.

Abstract: A system and method for the treatment and reduction of sludge via ozonation in a wastewater treatment process is disclosed. The sludge treatment system comprises: a sludge ozonation reactor coupled to an activated sludge treatment basin and adapted to receive a liquid stream of sludge containing biosolids from the activated sludge treatment basin. The sludge treatment system also includes an ozone-enriched gas injection system operatively coupled to the reactor and adapted to inject ozone-enriched gas into the liquid stream at or upstream of the sludge ozonation reactor. The sludge ozonation reactor is configured to allow effective gas-liquid contacting between the ozone-enriched gas and the liquid stream so as to oxidize the biosolids in the liquid stream and initiate bacterial cell lysis thereby reducing the biosolids. Upon reduction of the biosolids, the liquid stream is returned via a return line to the activated sludge basin or other discharge point.

Abstract: A system and method for oxygenating an aerobic sludge digester is provided. The disclosed embodiments include an aerobic sludge digester tank or vessel having a mechanically agitated contactor disposed therein, an oxygen injection subsystem adapted to inject oxygen into the digester tank proximate the mechanically agitated contactor. The embodiments of the mechanically agitated contactor include an agitator or impeller disposed within the draft tube which makes the draft tube the primary site for the gas-liquid mixing. In particular, the agitator or impeller is adapted to create gas bubbles having an average diameter between about 0.3 mm and 3.0 mm which are then dispersed into the aerobic digester. The mass transfer efficiency associated with the present system and method is enhanced from the combined effect of oxygen dissolution into the sludge and greater bubble residence time.

Abstract: A system and method for mixing high viscous liquids with gas is provided. The disclosed embodiments include a reactor or mixing vessel having a draft tube disposed therein, a gas injection subsystem adapted to inject gas into the reactor or mixing vessel proximate the entrance of the draft tube. The embodiments also include an agitator disposed within the draft tube which makes the draft tube the primary site for the gas-liquid mixing. In particular, the agitator is adapted to create gas bubbles having an average diameter between about 0.3 mm and 3.0 mm which are then ejected into the reactor or mixing vessel. The mass transfer efficiency associated with the present system and method is enhanced from the combined effect of gas dissolution into the high viscous liquid within the draft tube and greater bubble residence time within the high viscous liquid.

Abstract: A system and method for the ozone treatment of wastewater is disclosed. The disclosed wastewater treatment system includes a high selectivity reactor coupled to an activated sludge treatment basin. The high selectivity reactor is adapted to receive a stream containing sludge diverted directly or indirectly from the activated sludge treatment basin. The disclosed wastewater treatment system and method is adapted to inject a chemical agent, such as ozone-enriched gas, into the diverted stream for treatment within the high selectivity reactor for purposes of sludge reduction, foam control, or bulking control. The treated stream is then returned to the activated sludge treatment basin.

Abstract: A system and method for the treatment of wastewater is disclosed. The disclosed wastewater treatment system includes a high selectivity reactor coupled to a wastewater treatment reactor, such as an activated sludge treatment basin, membrane bioreactor or sequencing batch reactor. The high selectivity reactor is adapted to receive a liquid stream containing biosolids diverted directly or indirectly from the wastewater treatment reactor. The wastewater treatment system also includes a chemical injection subsystem operatively coupled to the high selectivity reactor and adapted to inject a chemical, such as ozone-enriched gas, into the diverted liquid stream to effect highly selective treatment of the diverted stream. The treated liquid stream is subsequently sent via a return line to the continuously stirred tank reactor or other discharge point.

Abstract: A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

Abstract: A system and method for the treatment and reduction of sludge via ozonation in a wastewater treatment process is disclosed. The sludge treatment system comprises: a sludge ozonation reactor coupled to an activated sludge treatment basin and adapted to receive a liquid stream of sludge containing biosolids from the activated sludge treatment basin. The sludge treatment system also includes an ozone-enriched gas injection system operatively coupled to the reactor and adapted to inject ozone-enriched gas into the liquid stream at or upstream of the sludge ozonation reactor. The sludge ozonation reactor is configured to allow effective gas-liquid contacting between the ozone-enriched gas and the liquid stream so as to oxidize the biosolids in the liquid stream and initiate bacterial cell lysis thereby reducing the biosolids. Upon reduction of the biosolids, the liquid stream is returned via a return line to the activated sludge basin or other discharge point.

Abstract: Compounds and compositions for inhibiting binding between dendritic cell-specific ICAM-3 grabbing non-integrin (DC-SIGN) and human immunodeficiency virus (HIV).

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

Abstract: A system is provided for creating a personalized user interface on a mobile platform to deliver personalized information content to a personal electronic device (PED) of a user on-board the mobile platform. The system includes at least one portal operable to communicate with the user's PED and a first database operable to maintain a set of characteristics relating to the user, the mobile platform and/or other factors. A controller is in communication with the database, and the controller transmits to the PED of the user information content received from a second database of a central control station. The information content is provided in accordance with the characteristics stored in the first database, and thus forms personalized information content and advertisements for the user.

Abstract: A method and system for creating an ozonated process solution, such as ozonated deionized water, having high ozone concentration. The system comprises, a static mixer coupled to a recirculation loop of an auxiliary tank. The system and method are designed so that during the initial feed of process liquid and ozone gas to the system, the process liquid and ozone gas pass through the static mixer prior to ever reaching the auxiliary. The static mixer mixes the ozone gas into the process liquid to form the ozonated process solution. Thus, the auxiliary tank is initially filled with an ozonated process solution. The ozonated process solution can be recirculated from the auxiliary tank and back through the static mixer while additional ozone gas is dissolved therein. This recirculation can be performed until a desired concentration of ozone is detected in the ozonated process solution.

Abstract: A system and method for processing substrates, such as porous low-K semiconductor wafers, using ultraviolet (UV) radiation is disclosed. The substrates are first cleaned in a wet processing module and then dried in a UV module under reduced pressure and at a temperature below 100 C., preferably at or below 80 C. A robot module transfers the substrates from the wet processing module to the UV module. The UV module can include a pulse xenon excimer lamp providing incoherent vacuum ultraviolet (VUV) radiation at 172 nm.

Abstract: A system and method for cleaning semiconductor wafers wherein the use of SCI and SC2 is eliminated and replaced by the use DIO3 and dilute chemistries.

Abstract: A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor.

Abstract: A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor.

Abstract: A method of removing photoresist from semiconductor wafers through the use of a sparger plate. According to the inventive method, at least one semiconductor wafer is positioned in a process tank above the sparger plate. A mixture of ozone and deionized water is introduced into the process tank at a position below the sparger plate. The mixture of ozone and deionized water is then introduced across the wafer via the sparger plate at an increased flow velocity while the wafer is submerged in the mixture of deionized water and ozone.

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.