Abstract: The invention includes a method of fabricating a laser device, that includes: depositing a photoresist on epitaxially grown layers, patterning said photoresist to form an aperture area, depositing a dielectric material on said patterned photoresist, depositing a liftoff layer on said dielectric material, removing portions of said dielectric material and liftoff layer that border said aperture area, implanting regions of the epitaxially grown layers bordering said aperture area, and depositing a metal layer on said dielectric material. The invention also includes a device including: a substrate comprising epitaxial layers and an aperture area, a dielectric mirror formed on top of said aperture area and an implanted region within said epitaxial layers, said implanted region bordering said aperture area.

Abstract: An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1−x)InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1−x)yIn1−yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1−xAs that are epitaxially grown on the multi quantum well active gain region.

Abstract: An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1−x)Inp, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1−x)yIn1−yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1−xAs that are epitaxially grown on the multi quantum well active gain region.

Abstract: An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1-x)InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1-x)yIn1-yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1-xAs that are epitaxially grown on the multi quantum well active gain region.

Abstract: The invention includes a method of fabricating a laser device, that includes: depositing a photoresist on epitaxially grown layers, patterning said photoresist to form an aperture area, depositing a dielectric material on said patterned photoresist, depositing a liftoff layer on said dielectric material, removing portions of said dielectric material and liftoff layer that border said aperture area, implanting regions of the epitaxially grown layers bordering said aperture area, and depositing a metal layer on said dielectric material. The invention also includes a device including: a substrate comprising epitaxial layers and an aperture area, a dielectric mirror formed on top of said aperture area and an implanted region within said epitaxial layers, said implanted region bordering said aperture area.

Abstract: An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1−x)InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1−x)yIn1−yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1−xAs that are epitaxially grown on the multi quantum well active gain region.

Abstract: A method of preparing a UV detector of Al.sub.x Ga.sub.1-x N. Metal organic chemical vapor deposition (MOCVD) is utilized to grow AlN and then Al.sub.x Ga.sub.1-x N on a sapphire substrate. A photodetector structure is fabricated on the AlGaN.

Abstract: The present invention directed to antireflective coatings presents a new method for producing graded index films from alternating very thin layers of two materials with proper but differing indices. During deposition the thickness of each of the many layer pairs deposited can remain fairly uniform while the layer thickness of the two materials making up each pair is adjusted so that the resulting average index matches the index of the desired profile for that part of the total thickness. A two source evaporation deposition system is used and the two materials may be, for example, thallium iodide and lead fluoride.

Abstract: A method of providing non-birefringent cubic thallium iodide thin films on potassium chloride optical elements. The method of this invention is to deposit thin film alternating layers of thallium iodide and a buffer material such that a composite coating is obtained. The optic buffer material may be lead fluoride. The thallium iodide film made by the method of this invention is highly transparent, insoluble and non-scattering.

Abstract: A protective layer is prepared for water soluble optical elements. A process for obtaining clear thallium iodide (TlI) films of 1 to 2 micron thickness on potassium chloride (KCl) substrate. The high index of refraction (2.34 - 2.46 at 10.6 microns) makes this coating material attractive as a component in an antireflection system of coatings.

Abstract: Cadmium tellurite with a composition CdTeO.sub.3 is formed by reactive sputtering of a cadmium telluride target in an oxygen atmosphere.