Abstract: An electronic memory device for storing data comprises a memory cell array arranged in at least one memory bank and comprising memory cells in which information is stored. The electronic memory device further comprises word lines and bit lines for addressing and reading the memory cells of the memory cell array. The word lines are configured to refresh in a refresh mode the information stored in the memory cells of the memory cell area by applying a predetermined activation potential at a predetermined refresh rate to the word lines. All word lines of the memory bank which do not have a common bit line are activated simultaneously in the refresh mode.

Abstract: An electronic memory device for storing data comprises a memory cell array arranged in at least one memory bank and comprising memory cells in which information is stored. The electronic memory device further comprises word lines and bit lines for addressing and reading the memory cells of the memory cell array. The word lines are configured to refresh in a refresh mode the information stored in the memory cells of the memory cell area by applying a predetermined activation potential at a predetermined refresh rate to the word lines. All word lines of the memory bank which do not have a common bit line are activated simultaneously in the refresh mode.