Patents by Inventor Richard Assion

Richard Assion has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CVD Mo deposition by using MoOCl
    Patent number: 11107675
    Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: August 31, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Thomas H. Baum, Philip S. H. Chen, Robert L. Wright, Bryan Hendrix, Shuang Meng, Richard Assion
  • CVD Mo DEPOSITION BY USING MoOCl4
    Publication number: 20180286668
    Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
    Type: Application
    Filed: April 26, 2018
    Publication date: October 4, 2018
    Inventors: Thomas H. Baum, Philip S.H. Chen, Robert L. Wright, Bryan Hendrix, Shuang Meng, Richard Assion
  • CVD Mo DEPOSITION BY USING MoOCl4
    Publication number: 20180019165
    Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
    Type: Application
    Filed: July 13, 2017
    Publication date: January 18, 2018
    Inventors: Thomas H. Baum, Philip S.H. Chen, Robert Wright, Bryan Hendrix, Shuang Meng, Richard Assion