Abstract: Sensor devices and systems can include a silicon substrate comprising a sensor-side and a backside. The backside can include a backside electrode. The sensor-side can include a chemical sensor. The chemical sensor can include a chemical sensor electrode, the chemical sensor electrode can be electrically coupled to the backside electrode by a through-silicon via (TSV), the TSV being physically and electrically connected to the chemical sensor electrode and extending from the chemical sensor electrode through the silicon substrate towards the backside. The TSV can electrically connect the chemical sensor to the backside electrode. A printed circuit board can surround the sensor device and can include a metal contact pad. The metal contact pad can be electrically coupled to the backside electrode by a wire bond. The sensor-side can include a polymeric membrane covering the chemical sensor.

Abstract: Aspects of the embodiments are directed to a microfluidic chip that includes a plurality of openings to expose a microfluidic channel. The plurality of openings are within a recessed area of the microfluidics chip, the recess defining a surface onto which a sensor die can be clamped. The surface can include a clamping bump that contacts a membrane of a solid-state chemical sensor. The surface can also include a glue stop that, in some embodiments, can act as a spacer to prevent over-compression of the sensor die as it is clamped onto the microfluidic chip. The microfluidic chip can include a rigid structure, such as a printed circuit board, that is affixed to a top surface of the microfluidic chip. The rigid structure can include contact pads that are electrically connected to sensor electrodes on the sensor die by a wire.

Abstract: Aspects of the embodiments are directed to a microfluidic chip and methods of making the same. The microfluidic chip can include a sensor device residing on the microfluidic chip, the sensor-side comprising a chemical sensor and the backside including a backside electrode, the chemical sensor electrically coupled to the backside electrode by a via; a microfluidics channel in the microfluidic chip, the sensor-side of the sensor device facing the microfluidics channel; and a metal contact electrically connected to the backside electrode.

Abstract: Aspects of the embodiments are directed to a microfluidic chip that includes a plurality of openings to expose a microfluidic channel. The plurality of openings are within a recessed area of the microfluidics chip, the recess defining a surface onto which a sensor die can be clamped. The surface can include a clamping bump that contacts a membrane of a solid-state chemical sensor. The surface can also include a glue stop that, in some embodiments, can act as a spacer to prevent over-compression of the sensor die as it is clamped onto the microfluidic chip. The microfluidic chip can include a rigid structure, such as a printed circuit board, that is affixed to a top surface of the microfluidic chip. The rigid structure can include contact pads that are electrically connected to sensor electrodes on the sensor die by a wire.

Abstract: Sensor devices and systems can include a silicon substrate comprising a sensor-side and a backside. The backside can include a backside electrode. The sensor-side can include a chemical sensor. The chemical sensor can include a chemical sensor electrode, the chemical sensor electrode can be electrically coupled to the backside electrode by a through-silicon via (TSV), the TSV being physically and electrically connected to the chemical sensor electrode and extending from the chemical sensor electrode through the silicon substrate towards the backside. The TSV can electrically connect the chemical sensor to the backside electrode. A printed circuit board can surround the sensor device and can include a metal contact pad. The metal contact pad can be electrically coupled to the backside electrode by a wire bond. The sensor-side can include a polymeric membrane covering the chemical sensor.

Abstract: Aspects of the embodiments are directed to a microfluidic chip that includes a plurality of openings to expose a microfluidic channel. The plurality of openings are within a recessed area of the microfluidics chip, the recess defining a surface onto which a sensor die can be clamped. The surface can include a clamping bump that contacts a membrane of a solid-state chemical sensor. The surface can also include a glue stop that, in some embodiments, can act as a spacer to prevent over-compression of the sensor die as it is clamped onto the microfluidic chip. The microfluidic chip can include a rigid structure, such as a printed circuit board, that is affixed to a top surface of the microfluidic chip. The rigid structure can include contact pads that are electrically connected to sensor electrodes on the sensor die by a wire.

Abstract: Embodiments are directed to a chemical sensor and a method of fabricating a chemical sensor that includes a membrane having full circumferential adhesion. The chemical sensor device includes a silicon substrate comprising a sensor-side and a backside. The sensor-side includes a sensor-side electrode; a first passivation layer disposed on the substrate; and a second passivation layer on the first passivation layer and adjacent to the sensor-side electrode, the passivation layer comprising an adhesion trench exposing a portion of the first passivation layer, and a polyimide ring disposed on the second passivation layer. The backside includes a backside electrode on the backside of the substrate. The substrate includes an electrically isolated doped region, such as a through silicon via, electrically connecting the sensor-side electrode and the backside electrode.

Abstract: Aspects of the embodiments are directed to a microfluidic chip and methods of making the same. The microfluidic chip can include a sensor device residing on the microfluidic chip, the sensor-side comprising a chemical sensor and the backside including a backside electrode, the chemical sensor electrically coupled to the backside electrode by a via; a microfluidics channel in the microfluidic chip, the sensor-side of the sensor device facing the microfluidics channel; and a metal contact electrically connected to the backside electrode.

Abstract: Aspects of the embodiments are directed to a microfluidic chip that includes a plurality of openings to expose a microfluidic channel. The plurality of openings are within a recessed area of the microfluidics chip, the recess defining a surface onto which a sensor die can be clamped. The surface can include a clamping bump that contacts a membrane of a solid-state chemical sensor. The surface can also include a glue stop that, in some embodiments, can act as a spacer to prevent over-compression of the sensor die as it is clamped onto the microfluidic chip. The microfluidic chip can include a rigid structure, such as a printed circuit board, that is affixed to a top surface of the microfluidic chip. The rigid structure can include contact pads that are electrically connected to sensor electrodes on the sensor die by a wire.

Abstract: Embodiments are directed to a chemical sensor and a method of fabricating a chemical sensor that includes a membrane having full circumferential adhesion. The chemical sensor device includes a silicon substrate comprising a sensor-side and a backside. The sensor-side includes a sensor-side electrode; a first passivation layer disposed on the substrate; and a second passivation layer on the first passivation layer and adjacent to the sensor-side electrode, the passivation layer comprising an adhesion trench exposing a portion of the first passivation layer, and a polyimide ring disposed on the second passivation layer. The backside includes a backside electrode on the backside of the substrate. The substrate includes an electrically isolated doped region, such as a through silicon via, electrically connecting the sensor-side electrode and the backside electrode.

Abstract: Nanopore based ion-selective electrodes and methods of their manufacture as well as methods for their use are disclosed and described. The nanopore based ion-selective electrode can include a pore being present in a solid material and having a nanosize opening in the solid material, a metal conductor disposed inside the pore opposite the opening in the solid material, a reference electrode material contacting said metal conductor and disposed inside the pore, a conductive composition in contact with the reference electrode and disposed in the pore, and an ion-selective membrane. The ion-selective membrane can be configured to isolate the metal conductor, reference electrode material, and conductive composition together within the pore.

Abstract: Nanopore based ion-selective electrodes and methods of their manufacture as well as methods for their use are disclosed and described. The nanopore based ion-selective electrode can include a pore being present in a solid material and having a nanosize opening in the solid material, a metal conductor disposed inside the pore opposite the opening in the solid material, a reference electrode material contacting said metal conductor and disposed inside the pore, a conductive composition in contact with the reference electrode and disposed in the pore, and an ion-selective membrane. The ion-selective membrane can be configured to isolate the metal conductor, reference electrode material, and conductive composition together within the pore.

Abstract: A micromachined device such as a solid-state liquid chemical sensor for receiving and retaining a plurality of separate liquid droplets at desired sites, a method of making the device and a method of using the device are provided. The technique works for both aqueous and solvent-based solutions. The device includes a substrate having an upper surface, and a first set of three-dimensional, thin film well rings patterned at the upper surface of the substrate. Each of the wells is capable of receiving and retaining a known quantity of liquid at one of the desired sites through surface tension. A method for patterning a membrane/solvent solution results in reproducibly-sized, uniformly-thick membranes. The patterning precision of this method allows one to place the membranes closer together, making the sensors smaller and less expensive, and the uniform film thickness imparts reproducibility to the sensors.

Abstract: A microsystem for determining clotting time of blood and a low-cost, single-use device for use therein are provided wherein the device has no moving parts or expensive optical sensors or magnets. The device includes a microfluidic channel and a microsensor at least partially in fluid communication with the channel. By analyzing changes in the sensor as a drop of blood flows down the microfluidic channel, the time at which the blood clots can be determined.

Abstract: MEMS-based, computer system, clock generation and oscillator circuits and LC-tank apparatus for use therein are provided and which are fabricated using a CMOS-compatible process. A micromachined inductor (L) and a pair of varactors (C) are developed in metal layers on a silicon substrate to realize the high quality factor LC-tank apparatus. This micromachined LC-tank apparatus is incorporated with CMOS transistor circuitry in order to realize a digital, tunable, low phase jitter, and low power clock, or time base, for synchronous integrated circuits. The synthesized clock signal can be divided down with digital circuitry from several GHz to tens of MHZ—a systemic approach that substantially improves stability as compared to the state of the art. Advanced circuit design techniques have been utilized to minimize power consumption and mitigate transistor flicker noise upconversion, thus enhancing clock stability.

Abstract: An apparatus and method are disclosed which provide a substantially linear relationship between an input signal, such as an input voltage or current, and a predetermined parameter, such as a frequency response or capacitance of a parallel plate capacitor or varactor. The apparatus comprises a square root converter and a logarithmic generator. The square root converter is adapted to provide a square root signal which is substantially proportional to a square root of the input signal. In the various embodiments, the logarithmic generator is adapted to provide an applied signal which is substantially proportional to a sum of a logarithm of the input signal plus the square root of the input signal. The applied signal is a pre-distorted signal which generally has a non-linear relation to the predetermined parameter and which, when applied, allows the predetermined parameter to vary substantially linearly with the input signal.

Abstract: A pseudo Set/Reset latch circuit is configured with modified NOR or NAND gates wherein one of the series pull-up devices or pull-down devices is removed. A minimum of three pseudo Set/Reset latches may be coupled as a ring oscillator generating an output and a non-skewed complementary output. Additionally, feed-forward inverting stages may be coupled in parallel with inverting paths in the ring oscillator primary path to further increase the frequency range of the ring oscillator. The pseudo Set/Reset latch circuits and the feed-forward inverting stages may be configured with voltage controlled devices that alter the delay of the stages as a means for varying the frequency of the ring oscillator either by varying the current drive of the circuitry driving the output of the latch stages or by varying the conductance of devices coupling between the latch stages. Feedforward inverting stages may comprise pseudo latches or inverter gates.

Abstract: MEMS-based, computer system, clock generation and oscillator circuits and LC-tank apparatus for use therein are provided and which are fabricated using a CMOS-compatible process. A micromachined inductor (L) and a pair of varactors (C) are developed in metal layers on a silicon substrate to realize the high quality factor LC-tank apparatus. This micromachined LC-tank apparatus is incorporated with CMOS transistor circuitry in order to realize a digital, tunable, low phase jitter, and low power clock, or time base, for synchronous integrated circuits. The synthesized clock signal can be divided down with digital circuitry from several GHz to tens of MHz—a systemic approach that substantially improves stability as compared to the state of the art. Advanced circuit design techniques have been utilized to minimize power consumption and mitigate transistor flicker noise upconversion, thus enhancing clock stability.

Abstract: A multi-threshold integrated circuit (IC) with reduced subthreshold leakage and method of reducing leakage. Selectable supply switching devices (NFETs and/or PFETs) between a logic circuit and supply connections (Vdd and Ground) for the circuit have higher thresholds than normal circuit devices. Some devices may have thresholds lowered when the supply switching devices are on. Header/footer devices with further higher threshold voltages and widths may be used to further increase off resistance and maintain/reduce on resistance. Alternatively, high threshold devices may be stacked to further reduce leakage to a point achieved for an even higher threshold. Intermediate supply connects at the devices may have decoupling capacitance and devices may be tapered for optimum stack height and an optimum taper ratio to minimize circuit leakage and circuit delay.

Abstract: An integrated circuit is disclosed that includes one or more blocks of switching logic (comprised of transistors) connected between a power supply and a common node. A control transistor connects the common node to ground. The control transistor has a higher threshold voltage level than the voltage threshold level(s) of the transistors that comprise the switching logic blocks. A bias generator provides a positive bias to the body of the control transistor when the control transistor is “on.” Further disclosed is an integrated circuit comprising a first plurality of serially connected transistors establishing a first current path from a voltage source to ground and a second plurality of serially connected transistors establishing a second current path from the voltage source to ground. The first and second plurality of transistors each includes at least one high-threshold transistor.