Abstract: Disclosed is a method and apparatus providing a microprocessor the ability to reuse data cache content fetched during runahead execution. Said data is stored and later retrieved based upon the instruction address of an instruction which is accessing the data cache. The reuse mechanism allows the reduction of address generation interlocking scenarios with the ability to self-correct should the stored values be incorrect due to subtleties in the architected state of memory in multiprocessor systems.

Abstract: A method providing a microprocessor with the ability to predict data cache content based on the instruction address of an instruction which is accessing the data cache allows the reduction of address generation interlocking scenarios with the ability to self-correct should the data cache content prediction be incorrect. Content prediction accuracy is kept high through the use of multiple filters. One filter allows predictions to be only used in scenarios where address generation interlock scenarios are present. A second filter allows predictions to be made only when patterns are detected which suggest a prediction will be correct. The third and final filter further improves prediction coverage by detecting patterns of correct potential predictions and utilizing them in the future when they would otherwise be ignored by the basic prediction mechanism.

Abstract: The invention concerns a semiconductor structure having a compatible mixture of bipolar and unipolar transistors. In that structure a monocrystalline p-type silicon substrate is employed which has its 1-0-0 crystallographic planes at a face on which an n epitaxial layer was grown. The epitaxial layer is divided into electrically isolated parts by V-grooves that extend down through the epitaxial layer and have their apices terminating in the substrate. A thin silicon dioxide film coats the V-grooves and those grooves are filled with polycrystallie silicon. Where it is desired to use the polycrystalline silicon as the insulated gate of a field effect transistor, the polycrystalline silicon is electrically conductive. Bases for bipolar transistors are formed by diffusion of an appropriate impurity into selected areas of the epitaxial layer. The emitters, drains, and sources are formed by diffusion of a different impurity.