Patents by Inventor Richard Bytheway

Richard Bytheway has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fast measurement of X-ray diffraction from tilted layers
    Patent number: 8437450
    Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: May 7, 2013
    Assignee: Jordan Valley Semiconductors Ltd.
    Inventors: John Wall, David Jacques, Boris Yokhin, Alexander Krokhmal, Paul Ryan, Richard Bytheway, David Berman, Matthew Wormington
  • FAST MEASUREMENT OF X-RAY DIFFRACTION FROM TILTED LAYERS
    Publication number: 20120140889
    Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer.
    Type: Application
    Filed: December 2, 2010
    Publication date: June 7, 2012
    Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.
    Inventors: John Wall, David Jacques, Boris Yokhin, Alexander Krokhmal, Paul Ryan, Richard Bytheway, David Berman, Matthew Wormington