Abstract: The instant invention is a method for converting particulate silicon into monocrystalline silicon suitable for the determination of contaminates present in the particulate silicon. The method uses a silicon vessel, with known levels of the contaminates to be determined, to contain the particulate silicon. The silicon vessel, containing the particulate silicon, is float-zone processed to form a monolithic unit of monocrystalline silicon. The concentration of contaminates in the monocrystalline silicon can then be determined by the more sensitive analytical methods known for analysis of monolithic, monocrystalline silicon. The instant method is especially useful for measuring very low levels of aluminum, boron, phosphorous, and carbon in particulate silicon.

Abstract: The present invention is a device for separating semiconductor grade silicon pieces into desired size ranges, while minimizing contact contamination of the separated pieces. The device employs a rotatable cylindrical screen, with contact surfaces of semiconductor grade silicon. In a preferred embodiment, the cylindrical screen consists of parallel rods of semiconductor grade silicon separated by semiconductor grade silicon, internal, spacers. In addition, external spacers of semiconductor grade silicon are arranged along the length of the parallel rods to further define the exclusion characteristics of the cylindrical screen.

Abstract: The present invention is a low-contaminate work surface for processing semiconductor grade silicon. The work surface is comprised of a parallel array of silicon elements forming a planar surface. The silicon elements are of comparable purity with the semiconductor grade silicon to be process, thus minimizing contact contamination. In an additional embodiment of the present invention, the low-contaminate work surface is part of a work station which provides for initial screening and sizing of the semiconductor grade silicon being processed.