Abstract: A method of cleaning wafer surfaces includes providing a wafer surface and cleaning the wafer surface using at least hydrofluoric acid (HF) and an etch reducing component. The etch reducing component is from the group of (R).sub.4 NOH wherein R=(C.sub.1 -C.sub.20)alkyls, either straight or branch chained, and further wherein each R is independently a (C.sub.1 -C.sub.20)alkyl, preferably a (C.sub.1 -C.sub.4)alkyl, and more preferably one of tetra ethyl ammonium hydroxide (TEAH) and tetra methyl ammonium hydroxide (TMAH). A cleaning solution for use in cleaning a wafer surface includes an H.sub.2 O diluted HF solution and an etch reducing component from the group above, preferably, TMAH. A system for performing an HF vapor cleaning process includes a vapor chamber for positioning a wafer having a wafer surface and means for providing an HF vapor to the vapor chamber. The HF vapor includes an inert carrier gas, an HF component, one of a water vapor or an alcohol vapor, and an etch reducing component.

Abstract: A surface having exposed doped silicon dioxide such as BPSG is cleaned with a vapor phase solution that etches thermal oxide at least one-third as fast as it etches the exposed doped silicon dioxide, resulting in more thorough cleaning with less removal of the exposed doped silicon dioxide. Specific applications to formation of container capacitors are disclosed. Preferred cleaning vapor phase solutions include about 1% water, about 5% hydrogen fluoride, and about 5% ammonia. The vapor phase solution is also useful in cleaning methods in which a refractory metal silicide is exposed to the cleaning vapor phase solution such as in cleaning prior to spacer formation or prior to a gate stack contact fill, in which case about 500 PPMV water, about 2% hydrogen fluoride, and about 2% ammonia is most preferred.