Abstract: A method, framework, and system for providing formalized Information Technology (IT) business decision making, which includes determining a relationship between at least one Information Technology (IT) environmental element and at least one Information Technology (IT) performance metric, and determining a business value based on the at least one Information Technology (IT) environmental element and the at least one Information Technology (IT) performance metric to optimize an Information Technology (IT) business decision based on at least one predetermined business objective. The at least one predetermined business objective is based on a set of system constraints.

Abstract: A method, framework, and system for providing formalized Information Technology (IT) business decision making, which includes determining a relationship between at least one Information Technology (IT) environmental element and at least one Information Technology (IT) performance metric, and determining a business value based on the at least one Information Technology (IT) environmental element and the at least one Information Technology (IT) performance metric to optimize an Information Technology (IT) business decision based on at least one predetermined business objective. The at least one predetermined business objective is based on a set of system constraints.

Abstract: A flow meter for use in a flow stream with a tubular housing, including a fluid inlet and a fluid outlet, in the flow stream, with the inlet pressure exceeding the outlet pressure. The interior has an orifice defined in a crystalline silicon membrane, along crystal planes of the silicon so that the geometry of the orifices is precisely known and has a sharp knife edge rim profile. Where the fluid is a gas, pressure and temperature transducers measure conditions inside of the housing for application of gas law principles. By using instantaneous pressure and temperature in the chamber, mass flow through the outlet orifices of the chamber is computed and delivered as an output signal.

Abstract: A miniature flow controller housing a fluid inlet and a fluid outlet, with the inlet pressure exceeding the outlet pressure. The outlet has orifices defined in a crystalline silicon membrane, along crystal planes of the silicon so that the geometry of the orifices is precisely known. The inlet and outlet are throttled by poppets which can seal the orifices on command of a device controller. The poppets are driven by shape retentive membranes which have two states, an open state and a closed state with a state change caused by application of small amounts of current to a resistive element in contact with the membrane. Rapid actuation of the poppets causes operation of the valve in a pulse mode. Where the fluid is a gas, pressure and temperature transducers measure conditions inside of the housing for application of gas law principles. By recording instantaneous pressure and temperature in the chamber, as the poppets are actuated, mass flow through the outlet orifices of the chamber is computed.

Abstract: A high-density MOSFET having field oxide self-aligned channel stops for device isolation and an optimal method of fabricating such a device is described. The process provides channel stops underlying and aligned with the edges of a field oxide layer and allows the dopant concentration of the channel stops to be established separately from that of the active device channel region by use of an independant channel stop implant. The active devices thus formed require minimal isolation area, have a high field threshold voltage, a low junction capacitance, and minimal body effect. They are particularly useful in high-speed, high-performance integrated circuits.

Abstract: A process is provided for fabricating MOSFET devices having field source, gate and drain regions. The threshold voltage of both the channel and field regions of such devices is controlled by forming a comparatively thick oxide film on a semiconductor surface, defining enhancement mode transistor regions in the oxide film to expose portions of the semiconductor surface, implanting p-type ions under conditions such that the peak distribution of p-type atoms lies in the semi-conductor substrate just beneath the semiconductor/-oxide interface and counter-doping with n-type ions under conditions such that no implanted ions penetrate the oxide film. As a consequence, a desirably high threshold voltage is obtained in the field region, while a desirably low threshold voltage is obtained in the channel region.

Abstract: The specification describes a process for making an insulated-gate field-effect transistor wherein a silicon nitride mask is deposited above the surface of a semiconductor body and is used in one embodiment of the invention in conjunction with a refractory gate member (1) as a mask in the formation of the source and drain regions by the ion implantation of conductivity-type-determining impurities on both sides of the gate and (2) as a mask in the formation of contact holes to the source and drain regions of the transistor for the subsequent provision of metal contacts to these regions. In another embodiment, there is described a process for forming source and drain contacts wherein the mask for the formation of contact holes by oxide etching is also the pattern definition and lift-off mask for the formation of metal contacts to the transistor.