Abstract: Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device. A semiconductor device having an insulating substrate on which a Schottky diode is formed between a metal layer and a semiconductor layer of polycrystalline or amorphous silicon extending over the metal layer is used inter alia in matrix display devices, such as LCDs. The Schottky diode forms part of a switching element of such a device and must have a low reverse current up to a reverse voltage of, for example, approximately 10 V. The known semiconductor device having Schottky diodes, in which the semiconductor material extends over a lateral surface of the Schottky metal, is found not to comply with this requirement. To overcome this deficiency a low leakage current is realized over a wide reverse voltage range due to the presence of a dielectric on the lateral surface of the Schottky metal. The dielectric suppresses the leakage current issuing from the lateral surface.