Abstract: Systems and methods for providing controllable substrate-to-source arrangements in a Molecular Beam Epitaxy (MBE) system to selectively adjust a distance, orientation, or other geometric configuration as between the source(s) and substrate(s) used in epitaxial growth systems are described herein. It has been found that by controllably adjusting height, crucible type and angle, and other processing conditions, that extremely high thickness uniformity can be accomplished in epitaxially grown wafers.

Abstract: Systems are provided that include one or more retractable deposition source assemblies that eliminate the need for a bellows, but do not require breaking the ultra-high vacuum of a growth module for source replacement or recharging with deposition material. Systems of the present invention may include source heads that allow for a differential pumping option that provides marked improvement in base pressure around the source head (and material) that provides longer lifetimes for sources in corrosive, reactive or oxidizing environments. In addition, systems of the invention do not require an entire growth module to be vented to refill or repair an effusion source. Instead, for maintenance events that are tied to a specific source, a retractable source assembly of the present invention allows the sources to be withdrawn from the system, isolated from the growth environment, and removed without venting the entire chamber of the growth module.

Abstract: The present invention provides deposition sources that can efficiently and controllably provide vaporized material for deposition of thin film materials. Deposition sources described herein can be used to deposit any desired material and are particularly useful for depositing high melting point materials at high evaporation rates. An exemplary application for deposition sources of the present invention is deposition of copper, indium, and gallium in the manufacture of copper indium gallium diselenide based photovoltaic devices.

Abstract: Systems are provided that include one or more retractable deposition source assemblies that eliminate the need for a bellows, but do not require breaking the ultra-high vacuum of a growth module for source replacement or recharging with deposition material. Systems of the present invention may include source heads that allow for a differential pumping option that provides marked improvement in base pressure around the source head (and material) that provides longer lifetimes for sources in corrosive, reactive or oxidizing environments. In addition, systems of the invention do not require an entire growth module to be vented to refill or repair an effusion source. Instead, for maintenance events that are tied to a specific source, a retractable source assembly of the present invention allows the sources to be withdrawn from the system, isolated from the growth environment, and removed without venting the entire chamber of the growth module.

Abstract: A substrate holder for holding a semiconductor substrate for processing in a molecular beam epitaxy system, the substrate including a front side, an opposite backside for epitaxial growth, and an outer edge extending between the front side and the backside, the substrate holder including a body comprising a central opening extending from a backside to a top side of the body, an inner ring surrounding the central opening, and a substrate support lip extending from the inner ring into the central opening, and at least one tensioning device operatively attached to the body and including a cam member and a spring in contact with a portion of the cam member, wherein the spring has a elongated portion and at least two contact portions extending from opposite ends of the elongated portion for contacting the outer edge of the substrate.

Abstract: The present invention relates to vacuum depositions systems and related deposition methods. Vacuum deposition systems that use one or more cyropanels for localized pumping of a deposition region where a substrate is positioned are provided. The present invention is particularly applicable to pumping and minimizing reevaporation of high vapor pressure deposition materials during molecular beam epitaxy.

Abstract: A deposition source includes a plurality of crucibles that each contains a deposition material. A heat shield provides at least partial thermal isolation for at least one of the plurality of crucibles. A body is included with a plurality of conductance channels. An input of each of the plurality of conductance channels is coupled to an output of a respective one of the plurality of crucibles. A heater increases a temperature of the plurality of crucibles so that each crucible evaporates the deposition material into the plurality of conductance channels. An input of each of a plurality of nozzles is coupled to an output of one of the plurality of conductance channels. Evaporated deposition materials are transported from the crucibles through the conductance channels to the nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux.

Abstract: The present invention provides deposition sources that can efficiently and controllably provide vaporized material for deposition of thin film materials. Deposition sources described herein can be used to deposit any desired material and are particularly useful for depositing high melting point materials at high evaporation rates. An exemplary application for deposition sources of the present invention is deposition of copper, indium, and gallium in the manufacture of copper indium gallium diselenide based photovoltaic devices.

Abstract: Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.

Abstract: The present invention relates to vacuum depositions systems and related deposition methods. Vacuum deposition systems that use one or more cyropanels for localized pumping of a deposition region where a substrate is positioned are provided. The present invention is particularly applicable to pumping and minimizing reevaporation of high vapor pressure deposition materials during molecular beam epitaxy.