Abstract: A vertical two chamber reaction furnace. The furnace comprises a lower chamber having an independently operable first heating means for heating the lower chamber and a gas inlet means for admitting a gas to create an ambient atmosphere, and an upper chamber disposed above the lower chamber and having an independently operable second heating means for heating the upper chamber. Disposed between the lower chamber and the upper chamber is a vapor permeable diffusion partition. The upper chamber has a conveyor means for conveying a reactant there through. Of particular importance is the thallinating of long-length thallium-barium-calcium-copper oxide (TBCCO) or barium-calcium-copper oxide (BCCO) precursor tapes or wires conveyed through the upper chamber to thereby effectuate the deposition of vaporized thallium (being so vaporized as the first reactant in the lower chamber at a temperature between about 700.degree. and 800.degree. C.

Abstract: A vertical two chamber reaction furnace. The furnace comprises a lower chamber having an independently operable first heating means for heating the lower chamber and a gas inlet means for admitting a gas to create an ambient atmosphere, and an upper chamber disposed above the lower chamber and having an independently operable second heating means for heating the upper chamber. Disposed between the lower chamber and the upper chamber is a vapor permeable diffusion partition. The upper chamber has a conveyor means for conveying a reactant there through. Of particular importance is the thallinating of long-length thallium-barium-calcium-copper oxide (TBCCO) or barium-calcium-copper oxide (BCCO) precursor tapes or wires conveyed through the upper chamber to thereby effectuate the deposition of vaporized thallium (being so vaporized as the first reactant in the lower chamber at a temperature between about 700.degree. and 800.degree. C.

Abstract: A process for preparing a superconducting film, such as a thallium-barium-calcium-copper oxide superconducting film, having substantially uniform phase development. The process comprises providing an electrodeposition bath having one or more soluble salts of one or more respective potentially superconducting metals in respective amounts adequate to yield a superconducting film upon subsequent appropriate treatment. Should all of the metals required for producing a superconducting film not be made available in the bath, such metals can be a part of the ambient during a subsequent annealing process. A soluble silver salt in an amount between about 0.1% and about 4.0% by weight of the provided other salts is also provided to the bath, and the bath is electrically energized to thereby form a plated film. The film is annealed in ambient conditions suitable to cause formation of a superconductor film.

Abstract: A process for the preparation of a precursor metallic powder composition for use in the subsequent formation of a superconductor. The process comprises the steps of providing an electrodeposition bath comprising an electrolyte medium and a cathode substrate electrode, and providing to the bath one or more soluble salts of one or more respective metals, such as nitrate salts of thallium, barium, calcium, and copper, which are capable of exhibiting superconductor properties upon subsequent appropriate treatment. The bath is continually energized to cause the metallic particles formed at the electrode to drop as a powder from the electrode into the bath, and this powder, which is a precursor powder for superconductor production, is recovered from the bath for subsequent treatment. The process permits direct inclusion of thallium in the preparation of the precursor powder, and yields an amorphous product mixed on an atomic scale to thereby impart inherent high reactivity.

Abstract: This is an improved method for providing silicon dioxide with openings which expose contact pad areas for connections to superconductor in the preparation of superconducting integrated circuits. It relates to the type of method which utilizes depositing of a silicon dioxide film on a substrate (including over superconductor conductor patterns on the substrate surface), placing a resist film on the silicon dioxide film, patterning the resist film to expose portions of the silicon dioxide, and reactive ion etching the exposed portions of the silicon dioxide film to expose contact pad areas of superconductor. The improvement utilizes an etchant gas consisting essentially of 50-95 volume percent nitrogen trifluoride and 5-50 volume percent rare gas (preferably about 77 volume percent nitrogen trifluoride, with argon or neon or mixtures thereof as the rare gas) for the reactive ion etching of the exposed portions of the silicon dioxide film.

Abstract: A film is disclosed which will accommodate high shear strain in a rigidly supported epoxy impregnated Nb.sub.3 Sn superconducting coil (SCC). In a generator application the SCC is subjected to a combined load due to differential thermal contraction, magnetic, and centrifugal forces. These strains could lead to coil fracture and resulting degradation of the field and current-carrying properties. A low modulus material at the interface between the SCC and support structure will reduce or distribute the shear strain to an acceptable level, i.e., no degradation in current carrying properties. Two film materials, polyethylene terephthalate Mylar (DuPont Chemical) and polycarbonate Makrofol KG (Mobay chemical) are disclosed as suitable damping or interface films. An adhesive such as the polyurethane Bostik 7070 is used for affixing the film to the winding surface.

Abstract: This is a method of producing grain-oriented, iron sheet for electrical applications. The process utilizes relatively pure iron which is deoxidized to have less than 50 ppm of oxygen. The carbon content is adjusted to 0.01-0.02 wt. % (preferably 0.010-0.015 wt. %). The material is hot rolled at a temperature of at least 800.degree. C., cold rolled with a 60-75% reduction, recrystallized in an non-oxidizing atmosphere at 700.degree.-820.degree. C., cold rolled a second time with a 60-75% reduction, annealed at 700.degree.-825.degree. C. in a non-oxidizing atmosphere and cold rolled a third time with a 60-75% reduction and final annealed at 850.degree.-900.degree. C. for 50-200 hours in a reducing atmosphere.