Abstract: A method and structure for producing a vertically built MOS structure which permits the out diffusion of dopant from a layer of chemically deposited (CVD) doped oxide into a layer of CVD laser recrystallized polysilicon is disclosed. This out diffusion is accomplished during a high temperature oxidation treatment of an intermediate structure. Source and drain mask alignment is chosen such that this out diffusion of dopant from the CVD glass at its boundary limit will meet with a diffusion of implanted ions. This process makes possible minimal overlap of the drain and source zones with the gate, thus reducing coupling capacitance while providing increased packing density.

Abstract: An improved heat resistant seal assembly for sealing across an annular recess between the interior of a wellhead member and the exterior of a tubular member including a heat resistant seal ring in the recess, a pressure responsive ring for moving the seal ring into sealing position in the recess, latching means to retain the pressure responsive ring in set position and spring means between the seal ring and the pressure responsive ring to maintain a sealing force on the seal ring.

Abstract: A subsea flowline connector for connecting a flowline through a port in a subsea atmospheric chamber vessel to a subsea christmas tree within the chamber including an actuator assembly within the chamber with at least one arm extending through the vessel adjacent the port, a carriage supported on the end of a flowline, a piston secured to the flowline and supported on the carriage, a receptacle on the piston to engage the arm, a flowline passage through the piston, actuation of said actuator moving said arm into engagement with said receptacle and pulling said piston into engagement with the port, a valve controlled bleed line to bleed pressure from said port as the piston has moved therein and a lock for retaining the piston within the port.